Publication detail

Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering

BILALOV, B. GITIKCHIEV, M. SOBOLA, D. EUBOV, S.

Original Title

Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering

English Title

Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering

Type

conference paper

Language

Russian

Original Abstract

This study describes the method of AlN films formation. This method allows to use standart vacuum devices and chip precursors. It is possible to obtain thin layers by variation of technological parameters.

English abstract

This study describes the method of AlN films formation. This method allows to use standart vacuum devices and chip precursors. It is possible to obtain thin layers by variation of technological parameters.

Keywords

aluminum nitride, sputtering, ion-plassma process, sapphire substrate

Key words in English

aluminum nitride, sputtering, ion-plassma process, sapphire substrate

Authors

BILALOV, B.; GITIKCHIEV, M.; SOBOLA, D.; EUBOV, S.

Released

27. 11. 2010

Publisher

Enegroatomizdat

Location

Moscow

ISBN

978-5-283-00867-7

Book

INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference "Fundamental Problems of Radioengineering and Device Construction"

Pages from

90

Pages to

93

Pages count

4

BibTex

@inproceedings{BUT75926,
  author="Bilal {Bilalov} and Magomed {Gitikchiev} and Dinara {Sobola} and Samur {Eubov}",
  title="Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering",
  booktitle="INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference {"}Fundamental Problems of Radioengineering and Device Construction{"}",
  year="2010",
  pages="90--93",
  publisher="Enegroatomizdat",
  address="Moscow",
  isbn="978-5-283-00867-7"
}