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BILALOV, B. GITIKCHIEV, M. SOBOLA, D. EUBOV, S.
Original Title
Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering
English Title
Type
conference paper
Language
Russian
Original Abstract
This study describes the method of AlN films formation. This method allows to use standart vacuum devices and chip precursors. It is possible to obtain thin layers by variation of technological parameters.
English abstract
Keywords
aluminum nitride, sputtering, ion-plassma process, sapphire substrate
Key words in English
Authors
BILALOV, B.; GITIKCHIEV, M.; SOBOLA, D.; EUBOV, S.
Released
27. 11. 2010
Publisher
Enegroatomizdat
Location
Moscow
ISBN
978-5-283-00867-7
Book
INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference "Fundamental Problems of Radioengineering and Device Construction"
Pages from
90
Pages to
93
Pages count
4
BibTex
@inproceedings{BUT75926, author="Bilal {Bilalov} and Magomed {Gitikchiev} and Dinara {Sobola} and Samur {Eubov}", title="Physic-technical basis of Al2O3/AlN structures formation by magnetron sputtering", booktitle="INTERMATIC 2010. Proceedings of the International Scientific and Technical Conference {"}Fundamental Problems of Radioengineering and Device Construction{"}", year="2010", pages="90--93", publisher="Enegroatomizdat", address="Moscow", isbn="978-5-283-00867-7" }