Publication detail

High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design

ARSLAN, E. METIN, B. HERENCSÁR, N. KOTON, J. MORGÜL, A. CICEKOGLU, O.

Original Title

High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design

Type

journal article in Web of Science

Language

English

Original Abstract

In this paper, a new, differential pair based, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has high voltage swings on ports X and Y and very low equivalent impedance on port X due to super source follower configuration. It also has high voltage swings (close to supply voltages) on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. Using HSpice, it is shown that the simulation results of the proposed CCI and also of the presented inductance simulators are in very good agreement with the expected ones.

Keywords

CCI, first generation current conveyor, grounded inductance simulator

Authors

ARSLAN, E.; METIN, B.; HERENCSÁR, N.; KOTON, J.; MORGÜL, A.; CICEKOGLU, O.

RIV year

2012

Released

30. 8. 2012

Publisher

Stefan cel Mare University of Suceava, Romania

ISBN

1582-7445

Periodical

ADV ELECTR COMPUT EN

Year of study

12

Number

3

State

Romania

Pages from

21

Pages to

26

Pages count

6

BibTex

@article{BUT93499,
  author="Emre {Arslan} and Bilgin {Metin} and Norbert {Herencsár} and Jaroslav {Koton} and Avni {Morgül} and Oguzhan {Cicekoglu}",
  title="High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design",
  journal="ADV ELECTR COMPUT EN",
  year="2012",
  volume="12",
  number="3",
  pages="21--26",
  doi="10.4316/AECE.2012.03003",
  issn="1582-7445"
}