Publication detail

ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS

MACKŮ, R. ŠICNER, J. KOKTAVÝ, P.

Original Title

ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS

Type

conference paper

Language

English

Original Abstract

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the reverse biased specimens. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. A mathematical description of the equivalent circuit model will be put forward. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

Keywords

Solar cell, Excess current, Reverse bias, Local defect, Edge isolation

Authors

MACKŮ, R.; ŠICNER, J.; KOKTAVÝ, P.

RIV year

2012

Released

11. 10. 2012

Publisher

Litera Brno

Location

Brno

ISBN

978-80-214-4594-9

Book

New Trends in Physics

Edition

1

Edition number

1

Pages from

65

Pages to

68

Pages count

4

BibTex

@inproceedings{BUT96032,
  author="Robert {Macků} and Jiří {Šicner} and Pavel {Koktavý}",
  title="ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS",
  booktitle="New Trends in Physics",
  year="2012",
  series="1",
  number="1",
  pages="65--68",
  publisher="Litera Brno",
  address="Brno",
  isbn="978-80-214-4594-9"
}