Course detail

Electronic devices.

FEKT-BESOAcad. year: 2011/2012

Semiconductors physics. PN-junction. Semiconductor Diode. Bipolar junction transistors. Field effect transistors. Power electronic devices - thyristor, TRIAC, DIAC, IGBT transistor. Optoelectronic devices. Vacuum and microwave devices. Cathode ray tubes.

Language of instruction

Czech

Number of ECTS credits

7

Mode of study

Not applicable.

Guarantor

prof. Ing. Jaroslav Boušek, CSc.

Department

Department of Microelectronics (UMEL)

Learning outcomes of the course unit

The knowledge about electronic devices and skills in practical use of electronic devices.

Prerequisites

The subject knowledge on the secondary school level is required.

Co-requisites

Not applicable.

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

Laboratory practicum - 30 points; minimum 20 points.
Final exam – 70 points; minimum 35 points.

Course curriculum

1. Semiconductors physics. Band diagrams of semiconductors. Intrinsic, p-type, n-type semiconductors, donors, acceptors, electrons and holes. Concentration of carriers in semiconductors. Electrical conductivity of semiconductors, drift current, diffusion current, Generation and recombination of carriers in semiconductors.
2. Junctions. PN-junction. PN-junction in steady state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagram without external voltage and for forward and reverse biased junction . Current-voltage characteristics. Breakdown of PN junction.
3 Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, Differential resistance of forward biased diode, diode as voltage controlled resistance and a switch..
4. Semiconductor Diode. Special types of diode: varicap, varactor, tunnel diode, Schottky diode. Fotodiode. Structure PIN, PIN-diode.
5 Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconuctor diodes.
6. Bipolar junction transistors (BJT). Structure and principle of operation (transistor effect). Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
7. Bipolar junction transistors (BJT):Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor, breakdown characteristics. The limits of transitor operation (safe operating area).
8. Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB configuration, emitter follower, current transfer, voltage transfer, input and output impedance. Transistor as a switch.
9. Field effect transistors JFET. MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
10. Field effect transistors. Linearized small signal low-frequency model. Structure CCD. Field effect transistor as memory bit. MESFET, structure, principle of operation. Power MOSFET: special structures, DMOS, VMOS, HEXFET (parallel integration). IGBT (insulated gate bipolar transitor), structure, equivalent circuit, principle of operation.
11. Power electronic devices. Silicon-controlled rectifier (SCR, thyristor): structure, equivalent circuit, principle of operation (the thyristor effect), current-voltage characteristics (forward blocking region, forward conduction region, reverse blocking region, reverse avalanche region, forward blocking voltage, holding current). Related devices: Silicon-controlled switch (SCS), Shockley diode): structure, characteristics. DIAC, TRIAC: structure, characteristics.
12. Optoelectronic devices Materials for light detectors, absorption of light, penetration depth. Photoresistor, photoconductivity. Phototransistor. Light emitting diode. Semiconductor laser.
13. Vacuum devices. Thermionic emission, vacuum tubes, diode, triode, pentode. Microwave devices - klystron, magnetron.

Work placements

Not applicable.

Aims

The knowledge about electronic devices acquirement.

Specification of controlled education, way of implementation and compensation for absences

Laboratory practicum. Numerical practicum.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall (EN)
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999 (CS)
Singh J. : Semiconductor Devices ,McGraw-Hill (EN)

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme EECC Bc. Bachelor's

    branch B-TLI , 1 year of study, summer semester, compulsory
    branch B-EST , 1 year of study, summer semester, compulsory
    branch B-SEE , 1 year of study, summer semester, compulsory
    branch B-MET , 1 year of study, summer semester, compulsory
    branch B-AMT , 1 year of study, summer semester, compulsory

  • Programme EEKR-CZV lifelong learning

    branch EE-FLE , 1 year of study, summer semester, compulsory

Type of course unit

 

Lecture

39 hod., optionally

Teacher / Lecturer

prof. Ing. Jaroslav Boušek, CSc.

Syllabus

Semiconductors physics. Band diagrams of semiconductors. Intrinsic, p-type, n-type semiconductors, donors, acceptors, electrons and holes. Concentration of carriers in semiconductors. Electrical conductivity of semiconductors, drift current, diffusion current, Generation and recombination of carriers in semiconductors.
Junctions. PN-junction. PN-junction in steady state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagram without external voltage and for forward and reverse biased junction . Current-voltage characteristics. Breakdown of PN junction.
Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, Differential resistance of forward biased diode, diode as voltage controlled resistance and switcher.
Semiconductor Diode. Special types of diode: varicap, varactor, tunnel diode, Schottky diode. Fotodiode. Structure PIN, PIN-diode.
Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconuctor diodes.
Bipolar junction transistors (BJT). Structure and principle of operation (transistor effect). Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
Bipolar junction transistors (BJT):Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor, breakdown characteristics. The limits of transitor operation (safe operating area).
Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB configuration, emitter follower, current transfer, voltage transfer, input and output impedance. Transistor as a switch.
Field effect transistors JFET. MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
Field effect transistors. Linearized small signal low-frequency model. Structure CCD. Field effect transistor as memory bit. MESFET, structure, principle of operation. Power MOSFET: special structures, DMOS, VMOS, HEXFET (parallel integration). IGBT (insulated gate bipolar transitor), structure, equivalent circuit, principle of operation.
Power electronic devices. Silicon-controlled rectifier (SCR, thyristor): structure, equivalent circuit, principle of operation (the thyristor effect), current-voltage characteristics (forward blocking region, forward conduction region, reverse blocking region, reverse avalanche region, forward blocking voltage, holding current). Related devices: Silicon-controlled switch (SCS), Shockley diode): structure, characteristics. DIAC, TRIAC: structure, characteristics.
Optoelectronic devices Materials for light detectors, absorption of light, penetration depth. Photoresistor, photoconductivity. Phototransistor. Light emitting diode. Semiconductor laser.
Vacuum devices. Thermionic emission, vacuum tubes, diode, triode, pentode. Microwave devices - clystron,magnetron. Cathode ray tubes.

Fundamentals seminar

13 hod., compulsory

Teacher / Lecturer

Ing. Roman Prokop, Ph.D.
Ing. Ondřej Hégr, Ph.D.

Syllabus

PN-diode: piecewise-linearized characteristics and corresponding equivalent circuit. Simple circuits with diodes in series or parallel configuration.
Differential resistance of forward biased diode, diode as voltage controlled resistance (applied as a switch). Diode as rectifier. Diode with large signal (the waveform of the input and output signal).
Zener diode: characteristics and important parameters, the principle of voltage stabilization, design and calculation of voltage stabilizer (regulator).
Simple circuits with bipolar transistors: DC properties (operating point) - graphical and numerical solution. Simple circuits with JFET and MOSFET: DC properties (operating point) - graphical and numerical solution.
Bipolar transistor as an amplifier, linearized low-frequency small signal equivalent circuit of an amplifier, input and output resistance, voltage and current gain.
Field effect transistor as an amplifier, linearized low frequency small signal equivalent circuit of an amplifier, input and output resistance, voltage gain.
BJT, FET and thyristor as a switch: basic circuits, graphs - driving current or voltage pulses, the output current or voltage as a function of time.

Laboratory exercise

26 hod., compulsory

Teacher / Lecturer

Ing. Marián Pristach, Ph.D.
Ing. Boleslav Psota, Ph.D.
Ing. Petr Kosina, Ph.D.
Ing. Martin Klíma, Ph.D.
Ing. Michal Pavlík, Ph.D.
Ing. Jakub Cieslar
Ing. Martin Adámek, Ph.D.
Ing. Milan Holík
Dina Younes, Ph.D.
Ing. Martin Magát, Ph.D.
Ing. Petr Schnederle
Ing. Martin Holain

Syllabus

Introduction, instruments in lab, safety rules.
Diode - characteristics.
Diode - rectifier, voltage multiplier.
Diode - controlled capacitance.
Diode - current controlled resistance, switch, reference voltage source.
Bipolar junction transistor - input, output and current transfer characteristics.
Bipolar junction transistor - constant current source, the operating point.
Bipolar junction transistor - amplifier, switch.
Field effect transistor - output and transfer characteristics.
Field effect transistor - amplifier, controlled resistance and switch.
Thyristor: characteristics.
Optron - characteristics, isolation amplifier.
Final test.