English

Not applicable.

Students will receive theoretical and practical knowledge of diagnostic methods used for evaluation of properties and parameters of electroinsulating and semiconductor materials and structures. Students will learn of diagnostic methods based on exploitation of electron beams for evaluation of structure and composition of materials.

The subject knowledge on the Bachelor´s degree level is requested.

Not applicable.

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Requirements for accreditation:
Active participation in laboratory lessons. Passing of semester project. Performance and passing of reports from laboratory measurements.
Final test.

Diagnostics and testing. Organization of testing and certification in CR and EU. Summary of diagnostic methods.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in DC electric field.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at frequency 50 Hz and at high voltage.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at middle and high frequency.
Diagnostic methods connected with evaluation of influence of working conditions on materials properties.
Diagnostic methods for evaluation of electrical properties of semiconductor wafers and structures. Resistivity measurements, four-point probe, spreading resistance, concentration-depth profile. Methods based on evaluation of capacitance-voltage measurement.
Diagnostic methods for contamination and defect detection in semiconductor materials. Microscope techniques. AFM, AES, ESCA and SIMS techniques.
Diagnostic methods based on interaction of electrons with solid. Electron optics, resolution and depth of focus. Electron scattering and diffusion.
Diagnostic methods based on interaction of electrons with solid. Emission of electrons and X-ray quanta. Backscattered electrons and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Detectors and signal processing. Imaging with backscattered and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Diffraction crystal structure analysis. Elemental analysis.
Statistic analysis of one-dimensional data. Random sampling characteristics. Spot and interval parameters estimation of normal, exponential and Weibull's distribution.
Tests of hypotheses. Tests for identification of gross errors, Dixon`s test, Grubs`s test. Tests of sampling distribution coincidence. Chi squared test, Kolmogorov`s test. Test of coincidence or difference of two variables.

Not applicable.

The aim of the course is to acquaint students with theory of diagnostic methods used for evaluation of properties and parameters of electroinsulating and semiconductor materials and structures, with theoretical principles of methods based on exploitation of electron beam for evaluation of structure and composition of material systems as well as with principles of evaluation of measured data.

Obligatory participation in teaching.

Not applicable.

Not applicable.

Reimer,L.:Scanning electron microscopy,Springer Verlag Berlin,1999 (EN)
Van Zant, P.: Microchip fabrication. Fourth edition. McGraw-Hill Publication. New York, 2000. (EN)

Eckertová,L., Frank,L.:Elektronová mikroskopie a difrakce,Academia Praha,1996 (CS)
Frank,L., Král,J.: Metody analýzy povrchů. Iontové, sondové a speciální metody. Academia, Praha,2002 (CS)