Czech

Not applicable.

By means of written and oral examination is verified that the student is able to:

Explain the physical nature of the semiconductor materials.
Explain the physical nature of abrupt PN junction;
Enumerate the main parameters of the PN junction and their properties;
Explain voltage breakdown of PN junction;
Describe the principle of metal-semiconductor junction and Schottky´s effect;
Enumerate physical mechanisms of transport of electric charge through a metal-semiconductor junction;
Describe the differences between the PN junction and metal-semiconductor junction;
Enumerate the types of heterojunctions;
Explain the differences between steep and graded heterojunction;
Enumerate the physical mechanisms of transport of electric charge through the junction;
Explain the concepts of lattice-matched and lattice-mismatched heterojunctions,
Define and explain terms coherently grown layers and the critical layer thickness;
Explain the principle of the bipolar transistor;
Describe the components of the emitter, collector and base current;
Explain the parameters of BT in the active normal mode (emitter injection efficiency, base transport factor);
Define current gain in Common Base configuration and current gain in Common Emitter configuration;
Describe the operation of BT in high injection mode;
Draw and describe the typical structure of BT with EB heterojunction;
Explain the terms: graded base and quasi-electrical field at heterostructure BT;
Describe the differences between abrupt heterojunction and graded heterojunction;
Draw and describe the MIS structure;
Enumerate the conditions for an ideal MIS structure;
Draw the energy band diagram of MIS structures and explain the terms: Fermi potential, Intrinsic potential, Volume potential and Surface potential;
Describe the characteristics of the oxide layer structure of MIS structure;
Draw and describe the structure of MOSFET;
Explain the importance and the principle of "Gradual-channel aproximation" and "Charge-sheet
approximation ";
Draw and describe operation of MOSFET structure in following modes: linear mode, the transition to saturation mode, saturation mode;
Define the terms “Short channel MOSFET transistor” and “Long channel MOSFET transistor”;
Describe the physical phenomena that occur in a short channel transistor;
Draw and describe the differences between the structure of the transistor with short and long channels;
Explain the principle of charge sparing model and its importance in reducing threshold voltage of the transistor with short channel;
Explain what it means to reduce potential barriers due to voltage VDS ("drain-induced barrier
lowering "DIBL) and how this model explains the reduction of the threshold voltage of Short channel transistor;
Explain the concept of hot electrons and describe phenomena originated by these electrons;
Describe the principle of the transistor with ferromagnetic gate.

The subject knowledge on the Bachelor´s degree level is requested.

Not applicable.

Techning methods include lectures, computer laboratories and practical laboratories. Course is taking advantage of e-learning (Moodle) system.

Students are assessed in this layout:

10 points - work in exercises
20 points - midterm test knowledge of exercises and lectures
70 points - a combination of written and oral exams

Detailed requirements for completion of a course are specified by a regulation issued by the lecturer responsible for the course and updated for every.

Not applicable.

Not applicable.

Detailed investigation of structures and properties of microelectronic devices, their physical and circuit models.
Detailed investigation of device models, their parameters and applicability.

The content and forms of instruction in the evaluated course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.

Not applicable.

Not applicable.

HORÁK M.: Mikroelektronické prvky a struktury, SKRIPTUM VUT 2010 (CS)

Not applicable.