Přístupnostní navigace
E-application
Search Search Close
Course detail
FEKT-DPA-VE1Acad. year: 2020/2021
Ringning problems of fast switching semiconductors MOS-FET, SiC MOS-FET and GaN MOS-FET, circuit realization of gate-drivers for these transistors, snubber circuits for the turn-off process (lossy and lossless), parasitic effects in power circuits of DC/DC converters with fast switching semiconductors - influence of the transformer leakage, transformer parasitic capacitance and transistor parasitic capacitance C-E, forward and reverse recovery of diodes and their ellimination. Skin-effect and proximity effect in the windings, problems of geometrical design of the power circuit and gate-driver, problems of EMC.
Language of instruction
Number of ECTS credits
Mode of study
Guarantor
Department
Learning outcomes of the course unit
Prerequisites
Co-requisites
Planned learning activities and teaching methods
Assesment methods and criteria linked to learning outcomes
Course curriculum
Work placements
Aims
Specification of controlled education, way of implementation and compensation for absences
Recommended optional programme components
Prerequisites and corequisites
Basic literature
Recommended reading
Classification of course in study plans
Seminar
Teacher / Lecturer
Syllabus