Course detail

Microelectronic Devices and Structures

FEKT-NMPRAcad. year: 2019/2020

Fundamental building blocks of microelectronic structures.

Language of instruction

English

Number of ECTS credits

5

Mode of study

Not applicable.

Guarantor

Ing. Ondřej Hégr, Ph.D.

Department

Department of Microelectronics (UMEL)

Learning outcomes of the course unit

Deep knowledge of microelectronic devices, their principles, structures and models in circuit simulators.

Prerequisites

The subject knowledge on the Bachelor´s degree level is requested.

Co-requisites

Not applicable.

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

Requirements for completion of a course are specified by a regulation issued by the lecturer responsible for the course and updated for every.

Course curriculum

Not applicable.

Work placements

Not applicable.

Aims

Detailed investigation of structures and properties of microelectronic devices, their physical and circuit models.
Detailed investigation of device models, their parameters and applicability.

Specification of controlled education, way of implementation and compensation for absences

The content and forms of instruction in the evaluated course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

MUSIL, V. a kol.: Mikroelektronické prvky a struktury. Cvičení. Elektronický text projektu KISP. Brno 2014

Recommended reading

Hess K.: Advanced Theory of Semiconductor Devices. Willey, 2000. (EN)
Sze S.M., Chang C.Y.: ULSI Devices. Wiley, 2000. (EN)
Sze S.M.: Modern Semiconductor Device Physics. Wiley, 1998. (EN)
Sze S.M.: Physics of Semiconductor Devices. Wiley, 1981. (EN)

Classification of course in study plans

  • Programme EECC-MN Master's

    branch MN-MEL , 1 year of study, winter semester, compulsory

Type of course unit

 

Lecture

26 hod., compulsory

Teacher / Lecturer

Ing. Ondřej Hégr, Ph.D.

Syllabus

1. Semiconductor physics: Brief review
2. PN junction, semiconductor diodes.
3. Metal-semiconductor junction, Schottky diodes, ohmic contacts.
4. Heterojunctions, superlattices.
5. Bipolar junction transistor.
6. Heterojunction bipolar transistor.
7. MIS structure.
8. Transistor MOSFET, CMOS structures.
9. Modern field effect transistors.
10. Transistor HEMT.
11. Light emitting diodes, semiconductor lasers.
12. New physical phenomena and related structures.
13. Time reserve.

Literature
Sze S. M., Ng K. K.: Physics of Semiconductor Devices. Wiley, 2006.
Sze S. M., Chang C. Y.: ULSI Devices, Wiley, 2000.
Hess K.: Advanced Theory of Semiconductor Devices. Wiley, 2000.
Liu J.: Photonic Devices. Cambridge University Press, 2005.
Brennan K. F., Brown A. S.: Theory of Modern Semiconductor Devices. Wiley 2002.

Exercise in computer lab

26 hod., compulsory

Teacher / Lecturer

Ing. Ondřej Hégr, Ph.D.

Syllabus

1. Band diagram of semiconductor structures, charge carriers concentration.
2. Extraction of pn-diode parameters from I-V characteristics.
3. Semiconductor diode as analog switch.
4. Barrier capacitance of semiconductor diode.
5. Extraction of Schottky diode parameters from I-V characteristics.
6. Extraction of diode parameters from C-V characteristics.
7. Diode structures in integrated circuits.
8. Bipolar junction transistor: structures and parameters.
9. Test
10. MOSFET: structures and parameters.
11. Analog applications of MOSFET: analog switch, active load.
12. Digital application of MOSFET: CMOS gate.
13. Light emitting diodes: structures and parameters.