Czech

Not applicable.

The knowledge about electronic devices and skills in practical use of electronic devices. Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:
Describe the arrangement of the PN junction and explain the formation of the space charge and the formation of built-in-voltage in the junction.
Describe in detail the mechanisms that affect the PN junction at steady state and in forward and reverse polarization.
Define the width of the PN junction and explain its dependence on concentration of doping impurities and applied voltage.
Define the meaning of Shockley ideal diode equation and to discuss current-voltage-characteristics of diodes including the influence of technological parameters.
Define the barrier and diffusion capacity of the PN junction.
Define and explain breakdown mechanisms of PN junction: Tunnel-breakdown, avalanche-breakdown, thermal- breakdown and surface- breakdown.
Explain the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze class-A-amplifier and switch with bipolar transistor.
Explain the principles and application of linear and nonlinear models of bipolar transistor.
Describe the structure of unipolar transistors and explain their operation.
Design and analyze class-A-amplifier and switch with unipolar transistors.
Describe the structure of a thyristor and its equivalent circuit and to explain its operation.
Describe the structure of the triac.
Define the principle of phase control of power switching devices.
Give examples of typical wiring of circuits with thyristor and triac.
Describe the mechanisms of interaction of light with matter.
Define the differences between photometric and radiometric quantities.
Explain the mechanisms of photoluminescence and electroluminescence.
Describe the principles of different types of lasers and explain the benefits of their use.

The subject knowledge on the secondary school level is required.

Not applicable.

Lectures, numerical practical classes, laboratory practical classes.Teaching methods depend on the type of course unit as specified in Article 7 of BUT Rules for Studies and Examinations.

Laboratory practicum - 30 points; minimum 20 points.
Final exam - 70 points; minimum 30 points.

Conductors, semiconductors, insulators. Semiconductors physics. Band diagrams of semiconductors. Intrinsic, p-type, n-type semiconductors, donors, acceptors, electrons and holes. Concentration of carriers in semiconductors. Electrical conductivity of semiconductors, drift current, diffusion current, Generation and recombination of carriers in semiconductors.
Junctions. PN-junction. PN-junction in steady state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagram without external voltage and for forward and reverse biased junction . Current-voltage characteristics. Breakdown of PN junction.
Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, Differential resistance of forward biased diode, diode as voltage controlled resistance and as a switch.
Semiconductor Diode. Special types of diode: varicap, varactor, tunnel diode, Schottky diode. Fotodiode. Structure PIN, PIN-diode.
Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconuctor diodes.
Bipolar junction transistors (BJT). Structure and principle of operation (transistor effect). Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
Bipolar junction transistors (BJT):Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor, breakdown characteristics. The limits of transitor operation (safe operating area).
Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB configuration, emitter follower, current transfer, voltage transfer, input and output impedance. Transistor as a switch.
Field effect transistors: JFET, MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
Field effect transistors. Linearized small signal low-frequency model. Structure CMOS. Field effect transistor as a memory element. Structure CCD.
Power electronic devices. Silicon-controlled rectifier (SCR, thyristor): structure, equivalent circuit, principle of operation (the thyristor effect), current-voltage characteristics (forward blocking region, forward conduction region, reverse blocking region, reverse avalanche region, forward blocking voltage, holding current). Related devices.
Optoelectronic devices Materials for light detectors, absorption of light, penetration depth. Photoresistor, photoconductivity. Phototransistor. Light emitting diode. Semiconductor laser. Solar cells.

Not applicable.

Introduce students to electronic devices and their applications and to the basic terminology in English as well as Czech.

Laboratory practical classes. Numerical practical classes.

Not applicable.

Not applicable.

BOUŠEK J., HORÁK M., Electronic Devices, FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2006 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky: sbírka příkladů. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015. (CS)
BOYLESTAD, Robert L. a Louis NASHELSKY. Electronic devices and circuit theory. 8th ed. Upper Saddle River: Prentice Hall, 2002. ISBN 0-13-094444-0. (CS)
SINGH J. Semiconductor Devices. McGraw-Hill, 1994. ISBN-10 0071139060. (CS)

Not applicable.