Czech

Not applicable.

Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:

Describe in detail the mechanisms that affect the PN junction at steady state and in forward and reverse polarization.
Define the barrier and diffusion capacitance of the PN junction.
Explain the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Define and explain breakdown mechanisms of PN junction: Tunnel-breakdown, avalanche-breakdown, thermal- breakdown and surface- breakdown.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze class-A-amplifier and switch with bipolar transistor.
Describe the structure of unipolar transistors JFET and IGFET and explain their operation.
Design and analyze class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Describe the structure of a thyristor and its equivalent circuit and explain its operation.
Describe the structure of the triac and explain its operation.
Define the principle of phase-angel control of power switching devices.
Design and explain typical wiring-diagrams of thyristor and triac.
Define and explain mechanisms of electron emission in vacuum.
Explain the operation of the most important vacuum-tubes (triode, tetrode, pentode, planar triode, magnetron and klystron).
Define parasitic properties of commonly used resistors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used capacitors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used inductors and explain the impact of used materials and design to formation or suppression of these parasitic properties.

The subject knowledge on the secondary school level is required.

Not applicable.

Teachning methods include mutually interlaced lectures, numerical exercises and practical laboratories. Course is taking advantage of e-learning (Moodle) system.

Numerical exercises, TEST 1 - 10 points; minimum 6 points.
Numerical exercises, TEST 2 - 10 points; point limit not set.
Laboratory exercises: 30 points; minimum 20 points
Final exam - 50 points; minimum 25 points.

Lectures:
1. Electric field in the depletion region of PN junction. Built-in voltage in relation to the band-gap of the semiconductor material and on the doping concentration. Electric current flow mechanisms in the forward and reverse directions. Diffusion capacitance. Barrierr capacitance of the junction. Current-voltage characteristics of the PN junction. Metal-semiconductor junction. Schottky diode.
2. Electric field in the depletion region in reverse polarization. Breakdown of PN junction. Use of electrical breakdowns for voltage stabilization. Possibilities of suppression of unwanted junction breakdowns. Extraction of minority carriers by electrical field in depletion region. Operation of photodiode. Operation of bipolar junction transistor.
3. Bipolar junction transistor (BJT). Structure of BJT. Early´s phenomenon. Setting the operation point of Class A voltage amplifier. Connection configurations CE, CC, CB. Output and input resistances, voltage gain. Linearized model of BJT according Giacoletto. Cut-off frequency of BJT. Structure of High Frequency BJT. BJT as a switch.
4. FET Transistors. Transistor J-FET. IGFET transistor, depletion-mode FET, enhanced-mode FET. FET as a voltage amplifier and a switch.
5. Switching devices. Thyristor, structure, substitite scheme, explanation of the operation. Reverse blocking mode, Forward blocking mode, Forward conduction mode. Current-voltage characteristics. Special thyristor types and their use. TRIAC, structure, principle of operation. DIAC, structure, examples of use. Principle of phase-angle control of switching devices.
6. Special Field Effect Transistors. Power MOSFET, structures LDMOS, VDMOS a VVMOS. Parallel integration of FETs. Insulated Gate Bipolar Transistor (IGBT), structure, equivalent circuit, principle of operation. HEMT a MESFET structures, principle of operation. FET as a memory cell. Structure CCD.
7. Vacuum components. Mechanisms of electron emission in vacuum. The most important tubes. Passive components. Impact of used materials and construction details on resulting properties of resistors, capacitors and inductors.
Laboratory exercises:
1. Devices in the laboratory. Measurement of properties of RC derivation circuit and RC integration circuit.
2. Semiconductor diode. Current-voltage characteristics of diodes. Diode as a rectifier. Dynamic properties of the diode rectifier.
3. Semiconductor diode in forward direction. Current-driven differential resistance. Diode as a switch. Diode voltage multiplier.
4. PN Junction in reverse direction. Diode as reference voltage source. Barrier capacity of the junction and its dependence on reverse-voltage. Photodiode. The operation of bipolar junction transistor.
5. Bipolar junction transistor (BJT). Current-voltage characteristics of the transistor in common-emitter (CE) configuration. Class A voltage amplifier. Dependence of voltage gain on power supply voltage and collector current.
6. BJT- Voltage amplifier in CE, CB and CC configurations.
7. BJT as a switch in normal mode and in reverse mode. Estimation of saturation delay. Suppression of saturation delay by desaturation diode. Saturation and active mode of photo-transistor in optron.
8. Unipolar transistors. JFET as a current source and Class A voltage amplifier. JFET as a switch and voltage controlled resistance. Current-voltage characteristics.
9. Unipolar transistors. MOSFET as Class A voltage amplifier and as a controlled resistor. Current-voltage characteristics.
10. Unipolar transistors. MOSFET as a switch. Dynamic behavior of the MOSFET switch. MOSFET switch with inductive load.
11.Thyristor. Current-voltage characteristics of the thyristor. Switching characteristic of thyristor. Estimation of the holding current.
Numerical exercises:
Numerical exercises closely follow the lectures. It also serves as pre

Not applicable.

Not applicable.

Laboratory practicum. Numerical practicum.

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Not applicable.

Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Singh J. : Semiconductor Devices ,McGraw-Hill

Not applicable.