Czech

Not applicable.

Based on the verification of laboratory work after completing the course the student is able to:

Understand and measure the formation of built-in-voltage in the junction and its influence on PN junction behavior.
Define and measure the barrier and diffusion capacitance of the PN junction.
Explain and measure the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Explain the operation of the structure of the bipolar transistor and measure its behavior in typical circuit connections.
Design and measure analyze class-A-amplifier and switch with bipolar transistor.
Explain the operation of unipolar transistors JFET and IGFET and measure its behavior in typical circuit connections.
Design and measure class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Explain the operation of the structure of a thyristor and measure its behavior in typical circuit connections.
Define the principle of phase-angle control of power switching devices and verify it on simple control circuit.

The subject knowledge on the secondary school level is required.

Not applicable.

Supervised laboratory classes. Course uses e-learning (Moodle)

The maximum number of points obtained for active participation in laboratory classes: 100.
Minimum points for credit: 70.

1. Devices in the laboratory. Measurement of properties of RC derivation circuit and RC integration circuit.
2. Semiconductor diode. Current-voltage characteristics of diodes in linear and logarithmic scale in dependence on semiconductor material. Diode as a rectifier. Dynamic properties of the diode rectifier.
3. Semiconductor diode in forward direction. Current-driven differential resistance. Diode as a switch. Suppression of barrier capacity effect on diode switch function. Diode voltage multiplier.
4. PN Junction in reverse direction. Diode as reference voltage source. Barrier capacitance of the junction and its dependence on reverse-voltage. Photodiode. The operation of bipolar junction transistor.
5. Bipolar junction transistor. Current-voltage characteristics of the transistor in common-emitter (SE) configuration. Class A amplifier. Dependence of voltage gain on power supply voltage and collector current.
6. Bipolar junction transistor. Bipolar transistor as amplifier in SE, SB and SC configurations. / Control measurements.
7. Bipolar transistor. Transistor as a switch in normal mode and in reverse mode. Estimation of saturation delay. Suppression of saturation delay by desaturation diode. Saturation and active mode of photo-transistor in optron.
8. Unipolar transistors. JFET as a current source and voltage amplifier. JFET as a switch and voltage controlled resistance. Current-voltage characteristics.
9. Unipolar transistors. MOSFET as an amplifier and controlled resistor. Current-voltage characteristics.
10. Unipolar transistors. MOSFET as a switch. Dynamic behavior of the MOSFET switch. MOSFET switch with inductive load.
11.Thyristor. Current-voltage characteristics of the thyristor. Switching characteristic of thyristor. Estimation of the holding current.

Not applicable.

Familiarize students with the electronic devices and their use.

Classroom participation according to time-schedule, achieving given score limit.

Not applicable.

Not applicable.

Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Singh J. : Semiconductor Devices ,McGraw-Hill

Not applicable.