Czech

Not applicable.

Student after completing the course:
1. knows division and the basic principles of semiconductor devices realization,
2. understands and knows the fundamentals of semiconductor devices and describes their use,
3. will explain the implementation steps in the process of manufacturing basic semiconductor devices for experimental activities in the laboratory,
4. takes an opinion on the possibility of employment in manufacturing, service and design institutions in the field of semiconductor components.

The subject knowledge on the Bachelor´s degree level is requested.

Not applicable.

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations. There are lessons, labs and excersizes included and also profesional text introduction. There is also e-learning (Moodle) included. Studend output is one own project.

The conditions for completion of a course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.

Syllabus
1. Selected physical principles
3. Metal–semiconductor junction, Schottky diode
4. Bipolar transistor
5. MIS Diode
6. Transistor JFET
7. Transistor MOSFET
8. Integrity of gate oxide
9. Hot carrier injection (HCI)
10. Stress migration and electromigration in metallization.
11. Plasma induced damage (PID)
12. Oxidation and epitaxy of silicon
13. Photolithography
14. Diffusion and implantation
15. Metallization

Not applicable.

The main aim of the course is to give students a basic knowledge about the basics of semiconductor technology. The aim of the course in the theoretical part is to acquaint students with basic physical properties of semiconductors, principles of semiconductor devices function, their curent conception and basics of their production. In the practical part of the course, the aim is to acquire basic knowledge and skills for working with semiconductors in a clean laboratory so that students will be able to to join research, development and production subjects, and also to continue in the scientific activities.

The content and forms of instruction in the evaluated course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.
Theoretical exercise - calculations of oxidation times, diffusion and depth of semiconductor transition.
Laboratory exercise and project - design and description of production of student semiconductor chip performed in the laboratory (cleaning, photolithography, metallization, etc.).

Not applicable.

Not applicable.

DIVENTRA M., EVOY S., HEFLIN J. R.: Introduction to Nanoscale Science and Technology. Kluwer Academic Publishers, Boston 2004 (EN)
I. Szendiuch, V. Musil, J. Stehlík. Výroba součástek a konstrukčních prvků. Elektronický studijní text. 2006. 84 str., VUT FEKT Brno. Brno: VUT Brno, 2006. s. 1 ( s.) (CS)
MUSIL, V. a kol.: Výroba součástek a konstrukčních prvků. Nanotechnologie. Prezentace projektu KISP. VUT v Brně, 2015 (CS)
POOLE,C.P.(JR). -OWENS, F.J.: Introduction to Nanotechnology, Wiley Interscience, 2003 ISBN:0-471-07935-9 (EN)
STRAKOŠ, V.: Výroba součástek a konstrukčních prvků. Prezentace projektu KISP, VUT v Brně, 2015 (CS) (CS)
SZENDIUCH, I. a kol. Technologie elektronických obvodů a systémů. GA102/00/ 0969. GA102/00/ 0969. Brno: Nakladatelství VUTIUM, Brno, 2002. 289 s. ISBN: 80-214-2072- 3. (CS)
YING J. Y.: Nanostructured Materials. Academic Press, San Diego 2001 STREETMAN, B.G. –BANERJEE, S.K.: Solid state electronic devices. Prentice Hall, 2010, ISBN 978-0-13-245479-7 (EN)

Not applicable.