Course detail

Nanoelectronics

FSI-TNIAcad. year: 2024/2025

Electronic properties and quantum phenomena. Nanoelectronic materials (semiconductors, dielectrics, ferroelectrics, magnetoelectronics, organic molecules) and related technological and analytic methods. Novel electronic devices for processing and storing information. Sensors and displays. Solar cells.

Language of instruction

Czech

Number of ECTS credits

4

Mode of study

Not applicable.

Guarantor

prof. RNDr. Jiří Spousta, Ph.D.

Department

Institute of Physical Engineering (ÚFI)

Entry knowledge

Elementary Physics, Quantum Physics, Solid State Physics.

Rules for evaluation and completion of the course

The assessment of a student is made upon his performance in practice and quality of a discussion on topics selected at the examination (lecture notes allowed at preparation).

The presence of students at practice is obligatory and is monitored by a tutor. The way how to compensate missed practice lessons will be decided by a tutor depending on the range and content of the missed lessons.

Aims

The goal is to provide an overview of the wide field of novel materials and devices for nanoelectronics.

Students will learn the current status of the interdisciplinary field of nanoelectronics which will also help them to select their own topic (for diplomma or doctoral thesis).

Study aids

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

KASAP, CAPPER (Ed.) Springer Handbook of Electronic and Photonic Materials 2006.
KITTEL, C: Úvod do fyziky pevných látek 1997.
R. WASER (Ed.) Nanoelectronics and Information Technology 2005.

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme N-FIN-P Master's 1 year of study, winter semester, compulsory-optional

  • Programme C-AKR-P Lifelong learning

    specialization CZS , 1 year of study, winter semester, elective

Type of course unit

 

Lecture

26 hod., optionally

Teacher / Lecturer

RNDr. Antonín Fejfar, CSc.
Ing. Vojtěch Uhlíř, Ph.D.

Syllabus

Semiconductors (charge carriers and their states in spatially confined semiconducting structures). Interfaces and heterostructures. Dissipative phenomena and electrical resistance.
Dielectrics (polarisation mechanisms and their frequency dependence, polarisation waves, optical properties). Ferroelectrics (spontaneous polarisation, phase transformations, domains).
Magnetoelectronics and spintronics.
Organic molecules and the structure - electronic properties relationship.
Si MOSFETs, ferroelectric FETs, quantum devices based on resonant tunneling.
Single electron devices. Carbon nanotubes as electronic devices. Molecular electronics and molecular device architecture.
Memory structures and data transmission. Sensors. Displays (OLED, field effect and plasma displays, electronic ink). Nanostructured solar cells.

Exercise

20 hod., compulsory

Teacher / Lecturer

RNDr. Antonín Fejfar, CSc.
Ing. Vojtěch Uhlíř, Ph.D.

Syllabus

The calculation of supportive theoretical examples takes place during the whole semester.

Computer-assisted exercise

6 hod., compulsory

Teacher / Lecturer

prof. RNDr. Jiří Spousta, Ph.D.

Syllabus

See seminars.