Course detail
Electronic Devices - Practice
FEKT-BKC-ESOPAcad. year: 2024/2025
PN junction. Semiconductor diode. Bipolar Junction Transistor. Unipolar Transistors. Switching devices, Thyristor.
Language of instruction
Czech
Number of ECTS credits
2
Mode of study
Not applicable.
Guarantor
Department
Entry knowledge
The subject knowledge on the secondary school level is required.
Rules for evaluation and completion of the course
The maximum number of points obtained for active participation in laboratory classes: 100.
Minimum points for credit: 70.
Classroom participation according to time-schedule, achieving given score limit.
Minimum points for credit: 70.
Classroom participation according to time-schedule, achieving given score limit.
Aims
Familiarize students with the electronic devices and their use.
Based on the verification of laboratory work after completing the course the student is able to:
Understand and measure the formation of built-in-voltage in the junction and its influence on PN junction behavior.
Define and measure the barrier and diffusion capacitance of the PN junction.
Explain and measure the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Explain the operation of the structure of the bipolar transistor and measure its behavior in typical circuit connections.
Design and measure analyze class-A-amplifier and switch with bipolar transistor.
Explain the operation of unipolar transistors JFET and IGFET and measure its behavior in typical circuit connections.
Design and measure class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Explain the operation of the structure of a thyristor and measure its behavior in typical circuit connections.
Define the principle of phase-angle control of power switching devices and verify it on simple control circuit.
Based on the verification of laboratory work after completing the course the student is able to:
Understand and measure the formation of built-in-voltage in the junction and its influence on PN junction behavior.
Define and measure the barrier and diffusion capacitance of the PN junction.
Explain and measure the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Explain the operation of the structure of the bipolar transistor and measure its behavior in typical circuit connections.
Design and measure analyze class-A-amplifier and switch with bipolar transistor.
Explain the operation of unipolar transistors JFET and IGFET and measure its behavior in typical circuit connections.
Design and measure class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Explain the operation of the structure of a thyristor and measure its behavior in typical circuit connections.
Define the principle of phase-angle control of power switching devices and verify it on simple control circuit.
Study aids
Not applicable.
Prerequisites and corequisites
Not applicable.
Basic literature
Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Singh J. : Semiconductor Devices ,McGraw-Hill
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Singh J. : Semiconductor Devices ,McGraw-Hill
Recommended reading
Not applicable.
Classification of course in study plans
- Programme BKC-MET Bachelor's 1 year of study, summer semester, compulsory