Course detail

Electronic Devices

FEKT-BPC-EDEAcad. year: 2024/2025

Semiconductors physics. PN-junction. Semiconductor Diode. Bipolar junction transistors. Field effect transistors. Power switching devices. Optoelectronic devices.

Language of instruction

Czech

Number of ECTS credits

3

Mode of study

Not applicable.

Guarantor

prof. Ing. Jaroslav Boušek, CSc.

Department

Department of Microelectronics (UMEL)

Entry knowledge

The subject knowledge on the secondary school level is required.

Rules for evaluation and completion of the course

Proffesional excercises: 30 points; minimum 20 points.
Final exam: 70 points; minimum 30 points.
Lectures. Professional exercises.

Aims

Introduce students to electronic devices and their applications and to the basic terminology in English as well as Czech.
Based on the knowledge gained in lectures and exercises and their verification in a written exam, the student is able to:
Describe in detail the mechanisms that act on the PN junction in the equilibrium state and in the forward voltage bias and in reverse voltage bias.
Define the barrier and diffusion capacity of the PN junction.
Explain the Shockley equation of the current voltage characteristic of the PN junction.
Explain the operation of the PN junction in the circuit connection of the rectifier, voltage stabilizer, variable capacitance diode, photodiode, luminescent diode, controlled differential resistance and diode switch.
Describe the structure of a bipolar junction transistor (BJT) and explain its operation.
Design and analyze a class A amplifier with BJT and a switch with BJT.
Describe the structure of unipolar transistor J-FET and explain its operation.
Describe the structure of unipolar transistor IGFET and explain its operation.
Design and analyze a class A amplifier with unipolar transistors and a switch with unipolar transistors.
Describe the structure of the thyristor and explain its operation on the substitution scheme.
Describe the properties of a triac and explain its use.
Define the principle of phase control of power-switching devices.
Describe the mechanisms of the interaction of radiation with a solid.
Define photometric and radiometric quantities.
Describe the arrangement of lasers and justify the benefits of their use.


Study aids

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

BOUŠEK J., HORÁK M., Electronic Devices, FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2006 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky: sbírka příkladů. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015. (CS)
BOYLESTAD, Robert L. a Louis NASHELSKY. Electronic devices and circuit theory. 8th ed. Upper Saddle River: Prentice Hall, 2002. ISBN 0-13-094444-0. (CS)
EMILIANO R. MARTINS , Essentials of Semiconductor Device Physics, Wiley 2022, ISBN: 978-1-119-88411-8 (CS)
SINGH J. Semiconductor Devices. McGraw-Hill, 1994. ISBN-10 0071139060. (CS)

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme BPC-APE Bachelor's 1 year of study, summer semester, compulsory

Type of course unit

 

Lecture

13 hod., compulsory

Teacher / Lecturer

prof. Ing. Jaroslav Boušek, CSc.

Syllabus

1) Basic concepts of semiconductor physics. Intrinsic and extrinsic semiconductors, electrons and holes, donors and acceptors. Concentration of charge carriers in semiconductors. Electrical conductivity of semiconductors. Diffusion of electric charge carriers. Generation and recombination of carriers in semiconductors. 2) PN-junction. The structure of PN junction. PN junction in equilibrium state, depletion region of PN junction, space charge, built-in voltage. PN junction in forward and reverse bias voltage. Current voltage characteristic of the PN junction. 3) PN-junction. Barrier and diffusion capacity of PN junction. PN junction breakdowns. Other types of semiconductor junctions, metal-semiconductor junction. 4) Semiconductor diode. Diode as a rectifier. Diode as a source of reference voltage. Inverse diode, tunnel diode. Schottky diode. 5) Semiconductor diode. Dynamic resistance of the diode, diode as controlled resistance, diode as a switch. Diode as controlled capacitance; varicap, varactor. Photodiode. PIN structure. 6) Technology of diodes and semiconductor structures. Point contact diode. Alloy-junction technology. Diffusion-junction technology. Planar technology. Planar-epitaxial technology. 7) Bipolar junction transistor (BJT). Structure, principle of operation. Normal and inverse connection of BJT. In both connections: active mode, saturation mode, CUT-OFF mode, current voltage characteristics in common emitter (CE) configuration. 8) Bipolar junction transistor (BJT). Class A amplifier. Configurations common emitter (CE), common base (CB), common collector (CC). Setting the operating point. Current and voltage gain. Input and output resistance. 9) Bipolar junction transistor (BJT). BJT as a switch, dynamic properties. Dependencies of BJT parameters on working conditions. The first and second breakdown of BJT. Limit parameters of BJT, Safe-Operating-Area (SOA). 10) Unipolar devices. J-FET, structure, principle of operation. Active mode, saturation mode. Current voltage characteristics. J-FET, as a current source, as an amplifier, as a switch, as a controlled resistor. 11) Unipolar devices. IGFET (MOSFET), structure, principle of operation. Depletion mode IGFET. Enhanced mode IGFET. Current voltage characteristics for both types. CMOS structure. Semiconductor memories using FET structures. CCD structure. 12) Multilayer devices. Thyristor: structure, substitution scheme, principle of operation. Thyristor in OFF state, in blocking state and in ON (conducting) state. Current voltage characteristics of thyristor. TRIAC, basic properties. Use of multilayer devices in control circuits. 13) Optoelectronic devices. Basic photometric quantities. Photoconductivity, photoresistor. Phototransistor. Light-emitting diode (LED). Laser diode. Types of Photodiodes. Photovoltaic cells.

Fundamentals seminar

13 hod., compulsory

Teacher / Lecturer

prof. Ing. Jaroslav Boušek, CSc.

Syllabus

1) Application of Ohm's law to electronic circuits. Principles for interconnecting electronic circuits. Measurement methods in electronic circuits. 2) Derivation and integration circuit. Time constant determined by calculation and graphically. 3) Integrating circuit – effect of load on output voltage and time constant. 4) Diode rectifier, determination of time trr. Comparison of the dynamic properties of a rectifier silicon diode, a germanium high-frequency diode and a Schottky diode. 5) AV characteristics of semiconductor diodes. 6) Differential resistance of the semiconductor junction. Controlled voltage divider. Determination of coefficient m. Diode switch. 7) Diode voltage stabilizer. 8) Photodetector, LED as a photodiode. 9) Bipolar transistor in connection CE, CB, CC; current gain, voltage gain. 10) BJT output characteristic in CE connection; voltage amplifier CE 11) BT as a voltage amplifier in connection with CE, CB, CC. 12) Controlled voltage amplifier in CE connection. 13) Bipolar transistor switch.