Czech

Not applicable.

The subject knowledge on the secondary school level is required.

Numerical exercises, TEST 1 - 15 points; minimum 8 points.
Numerical exercises, TEST 2 - 15 points; point limit not set
Laboratory exercises: 20 points; minimum 12 points
Final exam - 50 points; minimum 25 points.
Laboratory practicum. Numerical practicum.

The acquirement of the knowledge about alectric components and electronic devices .
Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:

Define the parasitic properties of resistors and explain the effect of materials used and the design of resistors on the generation or suppression of their parasitic properties.
Define the parasitic properties of capacitors and explain the effect of materials used and the design of capacitors to create or suppress their parasitic properties.
Define the parasitic properties of the inductors and explain the influence of the materials used and the design of the inductors to create or suppress their parasitic properties.
Describe the mechanisms that take place in the PN junction in the equilibrium state and in the forward and backward polarizations.
Define the barrier and diffusion capacitance of the PN junction.
Explain the operation of the PN junction in the rectifier, voltage stabilizer, capacitance diode, photodiode and luminescent diode.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze a class A amplifier with bipolar transistor and a bipolar transistor switch.
Explain the principle and use of linear and nonlinear bipolar transistor models.
Describe the structures of the unipolar transistors JFET and IGFET and explain their operation.
Design and analyze Class A voltage amplifier and Switch with JFET and IGFET Transistors.
Explain the principle of feedback control.
Describe a Class AB power amplifier.
Describe the design of the operational amplifier and explain its operation.
Describe the structure of the thyristor and explain its operation using its substitution scheme.
Describe the structure of the triac.
Define the principle of phase-angle control of switching elements.
Draw and explain examples of typical circuits with thyristor and triac.
Describe transistor switching structures IGBT, JFET, HEMT.
Explain the principle of the transistor converter.
Define the principles for the design and analysis of digital circuits.
Explain the principle of CMOS circuit operation.
Explain the function of the flip-flops.
Describe ways to manage memory.
Draw and describe the connection of rectifiers for different application areas.
Draw and describe examples of stabilizer connection.
Describe and explain the mechanisms of photoluminescence and electroluminescence.
Explains the principles of LED control in lighting technology.
Describe examples of the use of temperature, pressure, humidity and flow sensors.
Explain the method of data transmission over high-voltage installations.
Describe examples of the use of radio communication systems.

Not applicable.

Not applicable.

Singh J. : Semiconductor Devices ,McGraw-Hill
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum

Not applicable.