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FEKT-DKA-VE1Acad. year: 2024/2025
Ringning problems of fast switching semiconductors MOS-FET, SiC MOS-FET and GaN MOS-FET, circuit realization of gate-drivers for these transistors, snubber circuits for the turn-off process (lossy and lossless), parasitic effects in power circuits of DC/DC converters with fast switching semiconductors - influence of the transformer leakage, transformer parasitic capacitance and transistor parasitic capacitance C-E, forward and reverse recovery of diodes and their ellimination. Skin-effect and proximity effect in the windings, problems of geometrical design of the power circuit and gate-driver, problems of EMC.
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