English

Not applicable.

Of all faculties

The subject knowledge on the secondary school level is required.

Laboratory practicum - 30 points; minimum 20 points.
Final exam – 70 points; minimum 30 points.
Laboratory practicum. Numerical practicum.

The knowledge about electronic devices acquirement.
Based on the verification of the student's knowledge and skills in seminars, laboratory work and in the written exam, after completing the course the student is able to:

Describe the arrangement of the PN junction and explain the formation of the space charge and the formation of built-in-voltage in the junction.
Describe in detail the mechanisms that affect the PN junction at steady state and in forward and reverse polarization.
Define the width of the PN junction and explain its dependence on concentration of doping impurities and applied voltage.
Define the meaning of Shockley ideal diode equation and to discuss current-voltage-characteristics of diodes including the influence of technological parameters.
Define the barrier and diffusion capacity of the PN junction.
Define and explain breakdown mechanisms of PN junction: Tunnel-breakdown, avalanche-breakdown, thermal- breakdown and surface- breakdown.
Explain the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze class-A-amplifier and switch with bipolar transistor.
Explain the principles and application of linear and nonlinear models of bipolar transistor.
Apply simplified linear and non-linear transistor models for the design and analysis of class-A-amplifiers and bipolar transistor switches.
Describe the structure of unipolar transistors JFET and IGFET and explain their operation.
Design and analyze class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Describe the structure of a thyristor and its equivalent circuit and to explain its operation.
Describe the structure of the triac.
Explain the mechanism of switch-on-process of triac by means of positive and negative gate-current control.
Define the principle of phase control of power switching devices.
Give examples of typical wiring of circuits with thyristor and triac.
Describe the mechanisms of interaction of light with matter.
Define the differences between photometric and radiometric quantities.
Explain the mechanisms of photoluminescence and electroluminescence.
Describe the principles of different types of lasers and explain the benefits of their use.
Describe the design of the laser diode and define the conditions for its operation.
Explain the differences between the phototransistor and photodiode and describe their use.
Define the types of emission of electrons in vacuum and is able to discuss their physical mechanisms.
Explain the operation of the photomultiplier and describe its typical use.
Explain the operation of microwave tubes - klystron, traveling-wave-tube and magnetron and describe their use.
Define parasitic properties of commonly used resistors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used capacitors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used inductors and explain the impact of used materials and design to formation or suppression of these parasitic properties.

Not applicable.

Not applicable.

Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999
Singh J. : Semiconductor Devices ,McGraw-Hill

Not applicable.