Course detail

Special Electronic Devices and their Applications

FEKT-KSESAcad. year: 2010/2011

Microwave electronic devices. Vacuum microwave components (klystron, BWO). Microwave detectors, point-contact, Schottky and reverse diodes, PIN diodes, microwave varactors. Gunn, IMPATT, TRAPATT and BARITT diodes. Bipolar and unipolar microwave transistors with heterojunctions: AlGaAs/GaAs, Si/SiGe (HBT, MESFET, HEMT, PBT) and their applications.

Language of instruction

Czech

Number of ECTS credits

5

Mode of study

Not applicable.

Guarantor

Ing. Tomáš Urbanec, Ph.D.

Department

Department of Radio Electronics (UREL)

Learning outcomes of the course unit

The students become familiar with the microwave electronic devices, vacuum microwave components (klystron, BWO), microwave detectors, point-contact, Schottky and reverse diodes, PIN diodes, microwave varactors, Gunn, IMPATT, TRAPATT and BARITT diodes, bipolar and unipolar microwave transistors with heterojunctions: AlGaAs/GaAs, Si/SiGe (HBT, MESFET, HEMT, PBT) and their applications.

Prerequisites

The subject knowledge on the secondary school level is required.

Co-requisites

Not applicable.

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

Requirements for completion of a course are specified by a regulation issued by the lecturer responsible for the course and updated for every.

Course curriculum

Not applicable.

Work placements

Not applicable.

Aims

The aim of the course is to make students familiar with the microwave electronic devices, vacuum microwave components (klystron, BWO), microwave detectors, point-contact, Schottky and reverse diodes, PIN diodes, microwave varactors, Gunn, IMPATT, TRAPATT and BARITT diodes, bipolar and unipolar microwave transistors with heterojunctions: AlGaAs/GaAs, Si/SiGe (HBT, MESFET, HEMT, PBT) and their applications.

Specification of controlled education, way of implementation and compensation for absences

The content and forms of instruction in the evaluated course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

SVAČINA, J., JAKUBOVÁ, I. Mikrovlnná měření - návody pro laboratorní experimenty. Elektronický učební text. http://www.feec.vutbr.cz/et/skripta/urel/Mikrovlnna_mereni.pdf
SVAČINA, J., NOVOTNÝ, V. Speciální elektronické součástky a jejich aplikace. 2. přepracované a rozšířené vydání. Skripta FEI VUT v Brně. Brno: MJ Servis, 1999
SVAČINA, J. Speciální elektronické součástky a jejich aplikace - sbírka příkladů. Skripta FEKT VUT v Brně. Brno: MJ Servis, 2002

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme EEKR-CZV lifelong learning

    branch EE-FLE , 1 year of study, winter semester, elective specialised

Type of course unit

 

Lecture

33 hod., optionally

Teacher / Lecturer

Ing. Tomáš Urbanec, Ph.D.

Syllabus

Microwave electronic devices, categories and areas of applications.
Microwave vacuum tubes: reflex klystron, BWO, travelling wave tube.
Semiconductors for microwave applications. Packaging of microwave semiconductor devices.
Point-contact, Schottky and reverse microwave diodes. Microwave detectors and mixers.
PIN diodes and their HF applications.
Microwave capacitance diodes - varactors. Tunning varactors. Varactors for frequency multipliers, step recovery diodes.
Gunn diodes and their applications.
IMPATT and TRAPATT avalanche diodes, BARITT injection diodes.
Microwave bipolar transistors. Cut-off frequencies, low noise and power bipolar transistors.
Unipolar microwave transistors MESFETs. Low noise and power MESFETs.
Heterojunction microwave transistors. Heterojunction bipolar transistors (HBT), high electron mobility transistors (HEMT).

Fundamentals seminar

9 hod., optionally

Teacher / Lecturer

Ing. Tomáš Urbanec, Ph.D.

Syllabus

Microwave vacuum tubes: reflex klystron, BWO.
Point-contact and Schottky diodes. Microwave detectors and mixers.
PIN diodes and their HF applications.
Microwave varactors. Tunning varactors, varactors for frequency multipliers.
Oscillators and amplifiers with Gunn and avalanche diodes.

Laboratory exercise

10 hod., compulsory

Teacher / Lecturer

Ing. Tomáš Urbanec, Ph.D.

Syllabus

Parameters measurements of a reflex klystron.
Backward wave tube as a microwave sweept oscillator.
Properties of microwave detectors with point-contact and Schottky diodes.
Measurements on a Gunn diode oscillator.
PIN diode amplitude modulator and attenuator.