Industrial demand for high reliability of electronic devices stimulates research in the field of transport and noise phenomena in pressure sensors based on thick conducting films. We are concentrating our effort on the use of low frequency noise and nonlinearity as a diagnostic tool for the reliability improvement of thick film pressure sensors. Trends to increase the signal to noise ratio of thick film pressure sensors and to reduce manufacturing costs have increase the demand for smaller sensors sizes and shorter production time, as well as a wider technology window. Low frequency noise in pressure sensors appears as a result of carrier interaction with interfaces and defects. During the transport of charge carriers low frequency noise is generated on interfaces and the boundary between grains and other scattering centres. The possibility of the use of noise measurements in analysis, diagnostics and prediction of reliability of thick film resistors was studied during our previous cooperation (J. Sikula, J. Pavelka, D. Rocak, D. Belavic: Low Frequency Noise in Film Resistors (invited), VII. Van der Ziel Symposium on Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices, AIP Woodbury NY p. 42 (1998) The aim of this research cooperation is concerned with identification of failure modes and mechanisms as the main sources of problems related to quality assessment and reliability prediction. It is generally supposed that reliability is determined by irreversible processes and that their time dependence is a main parameter for thick film pressure sensors lifetime prediction. Expected output is based on noise spectroscopy measurement and evaluation of their statistical distribution which allow us to the prediction of possible types of failures of thick film pressure sensors. To obtain a sufficient amount of data, large numbers of samples have to be evaluated in order to make a correlation between noise spectral density data and results of accelerating ageing.

Popis česky
Industrial demand for high reliability of electronic devices stimulates research in the field of transport and noise phenomena in pressure sensors based on thick conducting films. We are concentrating our effort on the use of low frequency noise and nonlinearity as a diagnostic tool for the reliability improvement of thick film pressure sensors. Trends to increase the signal to noise ratio of thick film pressure sensors and to reduce manufacturing costs have increase the demand for smaller sensors sizes and shorter production time, as well as a wider technology window. Low frequency noise in pressure sensors appears as a result of carrier interaction with interfaces and defects. During the transport of charge carriers low frequency noise is generated on interfaces and the boundary between grains and other scattering centres. The possibility of the use of noise measurements in analysis, diagnostics and prediction of reliability of thick film resistors was studied during our previous cooperation (J. Sikula, J. Pavelka, D. Rocak, D. Belavic: Low Frequency Noise in Film Resistors (invited), VII. Van der Ziel Symposium on Quantum 1/f Noise and Other Low Frequency Fluctuations in Electronic Devices, AIP Woodbury NY p. 42 (1998) The aim of this research cooperation is concerned with identification of failure modes and mechanisms as the main sources of problems related to quality assessment and reliability prediction. It is generally supposed that reliability is determined by irreversible processes and that their time dependence is a main parameter for thick film pressure sensors lifetime prediction. Expected output is based on noise spectroscopy measurement and evaluation of their statistical distribution which allow us to the prediction of possible types of failures of thick film pressure sensors. To obtain a sufficient amount of data, large numbers of samples have to be evaluated in order to make a correlation between noise spectral density data and results of accelerating ageing.

Klíčová slova
Low frequency noise, 1/f noise, Pressure sensor, Thick film

Klíčová slova česky
Nízkofrekvenční šum, šum typu 1/f, senzory tlaku, tlusté vrstvy