Náplní projektu je vývoj prototypu zařízení pro aktivaci příměsí v SiC substrátech při teplotách 1600 až 2000 °C.

Popis anglicky
The aim of the project is to develop a prototype of a device for the activation of impurities in SiC substrates at temperatures of 1600 to 2000 °C. Initially, attention will be focused on the high-temperature reactor itself, which will be fitted to the skeleton of the existing vertical furnace of Si technology. Tests of heating system control, temperature calibration and vacuum tightness will be carried out. The aim of the reactor prototype is to identify possibilities for improving the design for the final “activator” with the new frame design allowing for its relatively easy assembly and simple maintenance. A unit for automatic loading SiC substrates will also be developed. The skeleton will include electronics and power sources, a gas panel, a vacuum system and a water-cooling panel.

Klíčová slova
karbid křemíku; vysokoteplotní polovodičová pec; přesné měření teploty; automatizace procesu

Klíčová slova anglicky
silicon-carbide, high temperature semiconductor furnace, precise temperature measurement, process automation