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MACKŮ, R. KOKTAVÝ, P. ŠICNER, J. HOLCMAN, V.
Originální název
Mechanical Induced Defects and Fractures in the Silicon Solar Cell Structure
Typ
konferenční sborník (ne článek)
Jazyk
angličtina
Originální abstrakt
Presented research is involved in excess electrical currents created when the silicon material contains cracks and fractures. We performed transport characteristics measurements and electrical noise measurement as well as sample visible and deep infra-red imaging. It turns out that mechanical induced defects are followed by specific electric characteristics. We observe crack-related local breakdowns and local overheating. It is also followed by the electrical current fluctuation in the 1/f form. All regions are thermally but also electrically stressed and the irreversible sample degradation originates. It could be pointed out that our detection methods are very sensitive and they could be also used for analyses of different materials.
Klíčová slova
Solar cell, local defects, fractures, electrical noise, light emission.
Autoři
MACKŮ, R.; KOKTAVÝ, P.; ŠICNER, J.; HOLCMAN, V.
Vydáno
1. 7. 2013
Nakladatel
VUTIUM
Místo
Brno
ISBN
978-80-214-4739-4
Strany od
216
Strany do
Strany počet
1
BibTex
@proceedings{BUT101573, editor="Robert {Macků} and Pavel {Koktavý} and Jiří {Šicner} and Vladimír {Holcman}", title="Mechanical Induced Defects and Fractures in the Silicon Solar Cell Structure", year="2013", pages="216--216", publisher="VUTIUM", address="Brno", isbn="978-80-214-4739-4" }