Detail publikace

Study of Dry Etching Process for Substrates Preparation

DALLAEVA, D. RAMAZANOV, S. KLAMPÁR, M. TOMÁNEK, P.

Originální název

Study of Dry Etching Process for Substrates Preparation

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This study describes the process of sapphire and silicon carbide substrates preparation by dry plasma etching. Processed substrates was studied by interferometry to define the etch depth and by atomic force microscopy to study the morphology and statistical analysis of surface roughness before and after etching. This allowed determining the optimal conditions of the process.

Klíčová slova

physical etching, substrate, silicon carbide, sapphire

Autoři

DALLAEVA, D.; RAMAZANOV, S.; KLAMPÁR, M.; TOMÁNEK, P.

Rok RIV

2013

Vydáno

11. 9. 2013

Nakladatel

Brno University of Technology

Místo

Brno

ISBN

978-80-214-4759-2

Kniha

International Interdisciplinary PhD Workshop 2013

Strany od

60

Strany do

64

Strany počet

4

BibTex

@inproceedings{BUT102101,
  author="Dinara {Sobola} and Shihgasan {Ramazanov} and Marián {Klampár} and Pavel {Tománek}",
  title="Study of Dry Etching Process for Substrates Preparation",
  booktitle="International Interdisciplinary PhD Workshop 2013",
  year="2013",
  pages="60--64",
  publisher="Brno University of Technology",
  address="Brno",
  isbn="978-80-214-4759-2"
}