Detail publikace
Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors
VLASSIS, S. KHATEB, F.
Originální název
Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.
Klíčová slova
MOS-resistor
Autoři
VLASSIS, S.; KHATEB, F.
Rok RIV
2014
Vydáno
4. 3. 2014
Místo
England
ISSN
0013-5194
Periodikum
Electronics Letters
Ročník
2014 (50)
Číslo
6, IF: 1.068
Stát
Spojené království Velké Británie a Severního Irska
Strany od
432
Strany do
434
Strany počet
2
URL
BibTex
@article{BUT105722,
author="Spyridon {Vlassis} and Fabian {Khateb}",
title="Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors",
journal="Electronics Letters",
year="2014",
volume="2014 (50)",
number="6, IF: 1.068",
pages="432--434",
doi="10.1049/el.2013.4181",
issn="0013-5194",
url="http://dx.doi.org/10.1049/el.2013.4181"
}