Detail publikace

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

RAMAZANOV, S. TALU, S. DALLAEVA, D. STACH, S. RAMAZANOV, G.

Originální název

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (111) is the large difference (~ 20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.

Klíčová slova

epitaxy, silicon carbide epilayer, atomic force microscopy, magnetron sputtering, substrate, surface roughness, fractal analysis

Autoři

RAMAZANOV, S.; TALU, S.; DALLAEVA, D.; STACH, S.; RAMAZANOV, G.

Rok RIV

2015

Vydáno

10. 8. 2015

Nakladatel

Elsevier

ISSN

0749-6036

Periodikum

SUPERLATTICES AND MICROSTRUCTURES

Ročník

2015

Číslo

85

Stát

Spojené království Velké Británie a Severního Irska

Strany od

395

Strany do

402

Strany počet

7

BibTex

@article{BUT115565,
  author="Shihgasan {Ramazanov} and Stefan {Talu} and Dinara {Sobola} and Sebastian {Stach} and Gusejn {Ramazanov}",
  title="Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution",
  journal="SUPERLATTICES AND MICROSTRUCTURES",
  year="2015",
  volume="2015",
  number="85",
  pages="395--402",
  doi="10.1016/j.spmi.2015.08.007",
  issn="0749-6036"
}