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KOLÍBAL, M. NOVÁK, L. SHANLEY, T. TOTH, M. ŠIKOLA, T.
Originální název
Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy
Typ
článek v časopise ve Scopus, Jsc
Jazyk
angličtina
Originální abstrakt
Growth of one-dimensional materials is possible through numerous mechanisms that affect the nanowire structure and morphology. Here, we explain why a wide range of morphologies is observed when silicon oxide nanowires are grown on silicon substrates using liquid gallium catalyst droplets. We show that a gallium oxide overlayer is needed for nanowire nucleation at typical growth temperatures, and that it can decompose during growth and, hence, dramatically alter the nanowire morphology. Gallium oxide decomposition is attributed to etching caused by hydrogen that can be supplied by thermal dissociation of H2O (a common impurity). We show that H2O dissociation is catalyzed by silicon substrates at temperatures as low as 320 C, identify the material supply pathways and processes that rate-limit nanowire growth under dry and wet atmospheres, and present a detailed growth model that explains contradictory results reported in prior studies. We also show that under wet atmospheres the Ga droplets can be mobile and promote nanowire growth as they traverse the silicon substrate.
Klíčová slova
Nanowires; SiO2; Grow mechanism; Electron Microscopy
Autoři
KOLÍBAL, M.; NOVÁK, L.; SHANLEY, T.; TOTH, M.; ŠIKOLA, T.
Vydáno
7. 1. 2016
ISSN
2040-3364
Periodikum
NANOSCALE
Ročník
8
Číslo
1
Stát
Spojené království Velké Británie a Severního Irska
Strany od
266
Strany do
275
Strany počet
10
URL
https://pubs.rsc.org/en/content/articlehtml/2016/nr/c5nr05152e
BibTex
@article{BUT120066, author="Miroslav {Kolíbal} and Libor {Novák} and Toby {Shanley} and Milos {Toth} and Tomáš {Šikola}", title="Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy", journal="NANOSCALE", year="2016", volume="8", number="1", pages="266--275", doi="10.1039/C5NR05152E", issn="2040-3364", url="https://pubs.rsc.org/en/content/articlehtml/2016/nr/c5nr05152e" }