Detail publikace

ULTRA LOW POWER TUNABLE TRANSCONDUCTOR

BAY ABO DABBOUS, S.

Originální název

ULTRA LOW POWER TUNABLE TRANSCONDUCTOR

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.

Klíčová slova

Bulk Driven MOST, low power low voltage, transconductor

Autoři

BAY ABO DABBOUS, S.

Vydáno

28. 4. 2016

Místo

Brno

ISBN

978-80-214-5350-0

Kniha

Proceedings of the 22st Conference STUDENT EEICT 2016

Strany od

695

Strany do

699

Strany počet

5

BibTex

@inproceedings{BUT125430,
  author="Salma {Bay Abo Dabbous}",
  title="ULTRA LOW POWER TUNABLE TRANSCONDUCTOR",
  booktitle="Proceedings of the 22st Conference STUDENT EEICT 2016",
  year="2016",
  pages="695--699",
  address="Brno",
  isbn="978-80-214-5350-0"
}