Detail publikace

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

HOFMAN, J. HÁZE, J. JAKSIC, A. SHARP, R. VASOVIC, N.

Originální název

In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing. The experimental results obtained allow improved insight into temperature sensitivity related problems of RADFET based dosimetry systems for space and terrestrial applications. The results show that the radiation-induced decrease in mobility, caused by the interface trap build-up, has a predominant effect on RADFET temperature coefficients.

Klíčová slova

RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods.

Autoři

HOFMAN, J.; HÁZE, J.; JAKSIC, A.; SHARP, R.; VASOVIC, N.

Vydáno

17. 11. 2016

Nakladatel

IEEE periodicals

Místo

Piscatawy, NJ 08854 USA

ISSN

0018-9499

Periodikum

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Ročník

PP

Číslo

99

Stát

Spojené státy americké

Strany od

1

Strany do

5

Strany počet

5

URL

http://ieeexplore.ieee.org/document/7747503/

BibTex

@article{BUT130481,
  author="Jiří {Hofman} and Jiří {Háze} and Aleksandar {Jaksic} and Richard {Sharp} and Nikola {Vasovic}",
  title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs",
  journal="IEEE TRANSACTIONS ON NUCLEAR SCIENCE",
  year="2016",
  volume="PP",
  number="99",
  pages="1--5",
  doi="10.1109/TNS.2016.2630275",
  issn="0018-9499",
  url="http://ieeexplore.ieee.org/document/7747503/"
}