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ZELENÝ, M. STRAKA, L. SOZINOV, A. HECZKO, O.
Originální název
Ab initio prediction of stable nanotwin double layers and 4O structure in Ni2MnG
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
The ab initio electronic structure calculations of the Ni2MnGa alloy indicate that the orthorhombic 4O structure exhibits the lowest energy compared to all known martensitic structures. The 4O structure is formed by nanotwin double layers, i.e., oppositely oriented nanotwins consisting of two (101) lattice planes of nonmodulated martensitic structure. It exhibits the lowest occupation of density of states at the Fermi level. The total energy 1.98 meV/atom below the energy of nonmodulated martensite is achieved within structural relaxation by shifting Mn and Ga atoms at the nanotwin boundaries. The same atomic shift can also be found in other martensitic nanotwinned or modulated structures such as 10M and 14M, which indicates the importance of the nanotwin double layer for the stability of these structures. Our discovery shows that the nanotwinning or modulation is a natural property of low-temperature martensitic phases in Ni-Mn-Ga alloys.
Klíčová slova
Martensitic phase transition, Shape-memory materials, Crystal structures
Autoři
ZELENÝ, M.; STRAKA, L.; SOZINOV, A.; HECZKO, O.
Vydáno
30. 12. 2016
ISSN
1098-0121
Periodikum
PHYSICAL REVIEW B
Ročník
94
Číslo
22
Stát
Spojené státy americké
Strany od
224108-1
Strany do
224108-6
Strany počet
6
URL
http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.224108