Detail publikace

Diode Model Parameters Extraction

RECMAN, M.

Originální název

Diode Model Parameters Extraction

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The contribution examines use of ISE-TCAD device simulation tools and the Star-HSPICE optimization tools to extract diode model parameters. The individual steps included in DESSIS diode simulation, INSPECT I-V electrical characteristics selection, HSPICE input data formatting, model parameters optimization and model evaluation are analysed and described. The extraction methodology using DESSIS simulated data as real (measured) electrical characteristics and HSPICE optimization procedures is proposed and applied to find the parameter values of the HSPICE diode model.

Klíčová slova

device simulation, circuit simulation, model parameters extraction

Autoři

RECMAN, M.

Rok RIV

2004

Vydáno

1. 1. 2004

ISBN

80-214-2819-8

Kniha

Socrates Workshop 2004. Intensive Training Programme in Electronic

Strany od

55

Strany do

60

Strany počet

6

BibTex

@inproceedings{BUT13139,
  author="Milan {Recman}",
  title="Diode Model Parameters Extraction",
  booktitle="Socrates Workshop 2004. Intensive Training Programme in Electronic",
  year="2004",
  pages="6",
  isbn="80-214-2819-8"
}