Detail publikace

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Abdulagatov A.I., Ramazanov Sh.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.Kh., Abdulagatov I.M.

Originální název

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Typ

článek v časopise ve Scopus, Jsc

Jazyk

angličtina

Originální abstrakt

In this work aluminum nitride (AlN) thin films were deposited by atomic layer deposition (ALD) technique using tris(diethylamido)aluminum (III) (TDEAA) with ammonia (NH3) or hydrazine (N2H4). Two different nitrogen sources were used to conduct comparative study AlN ALD using TDEAA/NH3 and TDEAA/N2H4. For these two systems, deposition was carried out at rector temperatures between 150 to 290 °C. In situ quartz crystal microbalance (QCM) measurements conducted between 160 to 225 °C suggested that surface reactions between TDEAA and NH3 or N2H¬4 are self-limiting. At all examined temperatures hydrazine needed smaller doses to reach saturation than ammonia. Ex situ thin film analysis techniques such as x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), and forward recoil spectroscopy (FReS) were used to examine resulted films. The optimal deposition temperature for both systems were found to be between 200 to 225 °C where highest films density and rate of growth was found. At the same temperature conditions, films deposited using N2H4 exhibited higher films density and higher oxidation resistant, compare to the films deposited using NH3. Elemental analysis of the balk of the film deposited at 225 °C with N2H4 showed a small amount of carbon ~ 1.8 at. % and ~ 3.9 at. % of oxygen. FReS analysis of AlN films deposited with NH3 and N2H4 indicated presence of ~ 25 at. % of hydrogen. This hydrogen believe to be present in the deposited films as unreacted methyl, amine (-NH) and/or amide (-NH2) groups which could be potentially removed by annealing. Overall, N2H4 showed more favorable surface chemistry for AlN ALD compare to NH3 film with higher density and lower sensitivity to oxidation.

Klíčová slova

Aluminum nitride, atomic layer deposition, hydrazine, ammonia

Autoři

Abdulagatov A.I., Ramazanov Sh.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.Kh., Abdulagatov I.M.

Vydáno

8. 4. 2018

ISSN

1063-7397

Periodikum

Russian Microelectronics

Ročník

47

Číslo

2

Stát

Ruská federace

Strany od

118

Strany do

130

Strany počet

13

BibTex

@article{BUT146844,
  author="Rashid {Dallaev}",
  title="Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine",
  journal="Russian Microelectronics",
  year="2018",
  volume="47",
  number="2",
  pages="118--130",
  doi="10.1134/S1063739718020026",
  issn="1063-7397"
}