Detail publikace

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

KONEČNÝ, M. BARTOŠÍK, M. MACH, J. ŠVARC, V. NEZVAL, D. PIASTEK, J. PROCHÁZKA, P. CAHLÍK, A. ŠIKOLA, T.

Originální název

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer− Emmett−Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM. In the computational part, a quantitative model based on solving the diffusion-like equation for the charge transport is used to fit the experimental data and thus to find the SiO2 surface resistivity ranging from 107 to 1010 Ω and exponentially decreasing with the RH increase. Such a behavior is explained using the formation of water layers predicted by the BET adsorption theory and electron-hopping theory that for the SiO2 surface patterned by AFM predicts a high water coverage even at low RHs.

Klíčová slova

graphene, silicon dioxide, KPFM, RH, BET, electron hopping

Autoři

KONEČNÝ, M.; BARTOŠÍK, M.; MACH, J.; ŠVARC, V.; NEZVAL, D.; PIASTEK, J.; PROCHÁZKA, P.; CAHLÍK, A.; ŠIKOLA, T.

Vydáno

11. 4. 2018

ISSN

1944-8244

Periodikum

ACS APPL MATER INTER

Ročník

10

Číslo

14

Stát

Spojené státy americké

Strany od

11987

Strany do

11994

Strany počet

8

URL

https://pubs.acs.org/doi/10.1021/acsami.7b18041

BibTex

@article{BUT147242,
  author="Martin {Konečný} and Miroslav {Bartošík} and Jindřich {Mach} and Vojtěch {Švarc} and David {Nezval} and Jakub {Piastek} and Pavel {Procházka} and Aleš {Cahlík} and Tomáš {Šikola}",
  title="Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity",
  journal="ACS APPL MATER INTER",
  year="2018",
  volume="10",
  number="14",
  pages="11987--11994",
  doi="10.1021/acsami.7b18041",
  issn="1944-8244",
  url="https://pubs.acs.org/doi/10.1021/acsami.7b18041"
}