Detail publikace

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

Andrey Denisyuk, Tomáš Hrnčíř, Jozef Vincenc Oboňa, Sharang, Martin Petrenec, Jan Michalička

Originální název

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.

Klíčová slova

TEM sample lamella integrated circuit FinFET device

Autoři

Andrey Denisyuk, Tomáš Hrnčíř, Jozef Vincenc Oboňa, Sharang, Martin Petrenec, Jan Michalička

Vydáno

17. 6. 2017

ISSN

1431-9276

Periodikum

MICROSCOPY AND MICROANALYSIS

Ročník

23

Číslo

3

Stát

Spojené státy americké

Strany od

484

Strany do

490

Strany počet

10

URL

https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797

BibTex

@article{BUT149572,
  author="Jan {Michalička}",
  title="Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device",
  journal="MICROSCOPY AND MICROANALYSIS",
  year="2017",
  volume="23",
  number="3",
  pages="484--490",
  doi="10.1017/S1431927617000241",
  issn="1431-9276",
  url="https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797"
}