Detail publikace

About v-i Pinched Hysteresis of Some Non-Memristive Systems

BIOLEK, D. BIOLEK, Z. BIOLKOVÁ, V. ASCOLI, A. TETZLAFF, R.

Originální název

About v-i Pinched Hysteresis of Some Non-Memristive Systems

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.

Klíčová slova

pinched hysteresis; memristor; inverse memristor; constitutive relation; inductor; capacitor

Autoři

BIOLEK, D.; BIOLEK, Z.; BIOLKOVÁ, V.; ASCOLI, A.; TETZLAFF, R.

Vydáno

24. 9. 2018

Nakladatel

Hindawi

Místo

USA

ISSN

1024-123X

Periodikum

MATHEMATICAL PROBLEMS IN ENGINEERING

Ročník

2018

Číslo

1

Stát

Spojené státy americké

Strany od

1

Strany do

10

Strany počet

10

URL

http://dx.doi.org/10.1155/2018/1747865

Plný text v Digitální knihovně

http://hdl.handle.net/11012/193102

BibTex

@article{BUT150098,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="About v-i Pinched Hysteresis of Some Non-Memristive Systems",
  journal="MATHEMATICAL PROBLEMS IN ENGINEERING",
  year="2018",
  volume="2018",
  number="1",
  pages="1--10",
  doi="10.1155/2018/1747865",
  issn="1024-123X",
  url="http://dx.doi.org/10.1155/2018/1747865"
}