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KHATEB, F. KULEJ, T. KUMNGERN, M. PSYCHALINOS, C.
Originální název
Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage (LV) low-power (LP) integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm x 78 µm. The DDA is supplied with 0.5 V and consume only 1.23 µW while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz and the total harmonic distortion is 0.2 % @ 1 kHz for 400 mV peak-to-peak input sine-wave.
Klíčová slova
Bulk-driven technique; Differential difference amplifier; Low-voltage low-power CMOS.
Autoři
KHATEB, F.; KULEJ, T.; KUMNGERN, M.; PSYCHALINOS, C.
Vydáno
25. 4. 2019
Nakladatel
SPRINGER BIRKHAUSER
Místo
USA
ISSN
0278-081X
Periodikum
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
Ročník
38
Číslo
6, IF: 1.922
Stát
Spojené státy americké
Strany od
2829
Strany do
2845
Strany počet
17
URL
http://dx.doi.org/10.1007/s00034-018-0999-x
BibTex
@article{BUT151344, author="Fabian {Khateb} and Tomasz {Kulej} and Montree {Kumngern} and Costas {Psychalinos}", title="Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications ", journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING", year="2019", volume="38", number="6, IF: 1.922", pages="2829--2845", doi="10.1007/s00034-018-0999-x", issn="0278-081X", url="http://dx.doi.org/10.1007/s00034-018-0999-x" }