Detail publikace

A Compact Model of the Nanoscale Double-Gate MOSFET.

Richard Ficek, Michal Horák

Originální název

A Compact Model of the Nanoscale Double-Gate MOSFET.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

We would like to present a simple, compact model for the nanoscale DG MOSFET using a flux method originally introduced by McKelvey. McKelvey’s flux method captures the essential physics of carrier transport in transistors and has been previously used for thin-base diodes and bipolar transistors. The device displays high transconductance and near-ideal subthreshold swing and the two gates provide good electrostatic integrity which minimizes drain induced barrier lowering (DIBL) and threshold variation with channel length. This work is based on paper from Dr. Lundstrom and Dr. Rahman.

Klíčová slova

Double-Gate MOSFET, drain-induced barrier lowering, backscattering coefficient.

Autoři

Richard Ficek, Michal Horák

Rok RIV

2005

Vydáno

16. 9. 2005

Nakladatel

Vysoké učení technické v Brně, Antonínská 548/1

Místo

Brno

ISBN

80-214-2990-9

Kniha

EDS'05 IMAPS CS INTERNATIONAL CONFERENCE PROCEEDINGS

Strany od

11

Strany do

15

Strany počet

5

BibTex

@inproceedings{BUT15191,
  author="Richard {Ficek} and Michal {Horák}",
  title="A Compact Model of the Nanoscale Double-Gate MOSFET.",
  booktitle="EDS'05 IMAPS CS INTERNATIONAL CONFERENCE PROCEEDINGS",
  year="2005",
  pages="5",
  publisher="Vysoké učení technické v Brně, Antonínská 548/1",
  address="Brno",
  isbn="80-214-2990-9"
}