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KOKTAVÝ, P., KOKTAVÝ, B.
Originální název
Local Instabilities In GaAsP Diode PN Junctions
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.
Klíčová slova
Noise, PN junction, avalanche breakdown, microplasma
Autoři
Rok RIV
2005
Vydáno
1. 1. 2005
Nakladatel
American Institute of Physics
Místo
Salamanca, Spain
ISBN
0-7354-0267-1
Kniha
Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05
Strany od
393
Strany do
396
Strany počet
4
BibTex
@inproceedings{BUT15272, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Local Instabilities In GaAsP Diode PN Junctions", booktitle="Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05", year="2005", pages="4", publisher="American Institute of Physics", address="Salamanca, Spain", isbn="0-7354-0267-1" }