Detail publikace

Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors

STÖGER-POLLACH, M. BUKVIŠOVÁ, K. SCHWARZ, S. KVAPIL, M. ŠAMOŘIL, T. HORÁK, M.

Originální název

Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Cathodoluminescence has attracted interest in scanning transmission electron microscopy since the advent of commercial available detection systems with high efficiency, like the Gatan Vulcan or the Attolight Mönch system. In this work we discuss light emission caused by high-energy electron beams when traversing a semiconducting specimen. We find that it is impossible to directly interpret the spectrum of the emitted light to the inter-band transitions excited by the electron beam, because the Čerenkov effect and the related light guiding modes as well as transition radiation is altering the spectra. Total inner reflection and subsequent interference effects are changing the spectral shape dependent on the sample shape and geometry, sample thickness, and beam energy, respectively. A detailed study on these parameters is given using silicon and GaAs as test materials

Klíčová slova

Cathodoluminescence; Cerenkov radiation; Transition radiation; STEM

Autoři

STÖGER-POLLACH, M.; BUKVIŠOVÁ, K.; SCHWARZ, S.; KVAPIL, M.; ŠAMOŘIL, T.; HORÁK, M.

Vydáno

1. 5. 2019

ISSN

0304-3991

Periodikum

Ultramicroscopy

Ročník

200

Číslo

1

Stát

Nizozemsko

Strany od

111

Strany do

124

Strany počet

14

URL

https://www.sciencedirect.com/science/article/pii/S0304399118303097?via%3Dihub

BibTex

@article{BUT156365,
  author="Michael {Stöger-Pollach} and Kristýna {Bukvišová} and Sabine {Schwarz} and Michal {Kvapil} and Tomáš {Šamořil} and Michal {Horák}",
  title="Fundamentals of cathodoluminescence in a STEM: The impact of sample geometry and electron beam energy on light emission of semiconductors",
  journal="Ultramicroscopy",
  year="2019",
  volume="200",
  number="1",
  pages="111--124",
  doi="10.1016/j.ultramic.2019.03.001",
  issn="0304-3991",
  url="https://www.sciencedirect.com/science/article/pii/S0304399118303097?via%3Dihub"
}