Detail publikace

Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

DALLAEV, R.

Originální název

Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).

Klíčová slova

aluminum nitride, atomic layer deposition, atomic force microscopy, Si single crystal wafers, topography, x-ray photoelectron spectroscopy.

Autoři

DALLAEV, R.

Vydáno

25. 4. 2019

ISBN

978-80-214-5735-5

Kniha

Proceedings of the 25 th Conference STUDENT EEICT 2019

Edice

doc. Ing. Vítězslav Novák, Ph.D.

Strany od

704

Strany do

709

Strany počet

6

BibTex

@inproceedings{BUT156809,
  author="Rashid {Dallaev}",
  title="Characterization of aln thin films deposited on thermally processed silicon substrates using pe-ald",
  booktitle="Proceedings of the 25
th Conference STUDENT EEICT 2019",
  year="2019",
  series="doc. Ing. Vítězslav Novák, Ph.D.",
  pages="704--709",
  isbn="978-80-214-5735-5"
}