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FRANCESCHI, G. WAGNER, M. HOFINGER, J. KRAJŇÁK, T. SCHMID, M. DIEBOLD, U. RIVA, M.
Originální název
Growth of In2O3(111) thin films with optimized surfaces
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
Indium oxide is widely employed in applications ranging from optoelectronics and gas sensing to catalysis, as well as in thin-film heterostructures. To probe the fundamentals of phenomena at the heart of In2O3-based devices that are tied to the intrinsic surface and interface properties of the material, well-defined single-crystalline In2O3 surfaces are needed. We report on how to grow atomically flat In2O3(111) thin films on yttria-stabilized zirconia substrates by pulsed laser deposition. The films are largely relaxed and reproduce the atomic-scale details of the surfaces of single crystals, except for line defects originating from the antiphase domain boundaries that form because of the one-on-four lattice match between the surface unit cells of In2O3(111) and of the substrate. While optimizing the growth conditions, we observe that the morphology of the films is ruled by the oxygen chemical potential, which determines the nature and diffusivity of adspecies during growth.
Klíčová slova
OXIDE; MORPHOLOGY; MOBILITY
Autoři
FRANCESCHI, G.; WAGNER, M.; HOFINGER, J.; KRAJŇÁK, T.; SCHMID, M.; DIEBOLD, U.; RIVA, M.
Vydáno
10. 10. 2019
ISSN
2475-9953
Periodikum
PHYSICAL REVIEW MATERIALS
Ročník
3
Číslo
10
Stát
Spojené státy americké
Strany od
103403
Strany do
Strany počet
URL
https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403
BibTex
@article{BUT159387, author="Giada {Franceschi} and Margareta {Wagner} and Jakob {Hofinger} and Tomáš {Krajňák} and Michael {Schmid} and Ulrike {Diebold} and Michele {Riva}", title="Growth of In2O3(111) thin films with optimized surfaces", journal="PHYSICAL REVIEW MATERIALS", year="2019", volume="3", number="10", pages="103403--103403", doi="10.1103/PhysRevMaterials.3.103403", issn="2475-9953", url="https://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.103403" }