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Detail publikace
JAVID, M., PTÁČEK, K., BURTON, R., KITCHEN, J.
Originální název
CMOS Bi-directional Ultra-wideband Galvanically Isolated Die-to-die Communication Utilizing a Double-isolated Transformer
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
In this work, an ultra-wideband (UWB) bi-directional galvanic isolator (BDGI) is reported for the first time. The proposed design methodology uses time-division-duplex (TDD) protocol to merge the functionality of two passive galvanically isolated channels into one magnetically coupled communication channel between two chips, enabling up to 50% form-factor and assembly cost reduction while achieving state-of-art performance. A low-power UWB pulse polarity-modulated transceiver architecture is presented to maximize the channel's capacity to 300 Mb/s and minimize power consumption and propagation delay to 200 pj/b and 5 ns respectively. The communication channel utilizes a double-isolated transformer coupled channel consisting of two transformers connected in series using bondwires and achieves 11 kVpk (7.8 kVrms) high voltage isolation, the highest reported without adding extra steps or alternating the native CMOS fabrication process. The system is realized in a 0.25 um BCD (Bipolar-CMOS-DMOS) process with 0.8 mm 2 silicon area per channel. The system uses odd-symmetry center-tapped transformers and differential transceivers to increase noise/transient immunity.
Klíčová slova
Chip-To-Chip, Gate-Driver, HVIC, Integrated-Passive-Device, Isolators, RF, System-on-chip, Ultra-Wide-Band
Autoři
Vydáno
25. 6. 2018
Nakladatel
IEEE
Místo
Piscataway
ISBN
978-1-5386-2927-7
Kniha
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Strany od
88
Strany do
91
Strany počet
4
URL
https://ieeexplore.ieee.org/document/8393609
BibTex
@inproceedings{BUT161095, author="Karel {Ptáček}", title="CMOS Bi-directional Ultra-wideband Galvanically Isolated Die-to-die Communication Utilizing a Double-isolated Transformer", booktitle="2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018", year="2018", pages="88--91", publisher="IEEE", address="Piscataway", doi="10.1109/ISPSD.2018.8393609", isbn="978-1-5386-2927-7", url="https://ieeexplore.ieee.org/document/8393609" }