Detail publikace

SiNx and SiO2 as passivation layers for high grade solar cells.

Ondrej Hegr, Jaroslav Bousek

Originální název

SiNx and SiO2 as passivation layers for high grade solar cells.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In the semiconductor and photovoltaic aplication, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centres that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition the more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, the passivation layers are deposited by means of reactive magnetron sputtering.

Klíčová slova

surface passivation, solar cell, deposition of SiN and SiO2, recombination

Autoři

Ondrej Hegr, Jaroslav Bousek

Rok RIV

2005

Vydáno

23. 9. 2005

Nakladatel

nakl. Z. Novotný

Místo

Brno

ISBN

80-214-3042-7

Kniha

Socrates workshop 2005

Číslo edice

1

Strany od

186

Strany do

191

Strany počet

6

BibTex

@inproceedings{BUT16445,
  author="Ondřej {Hégr} and Jaroslav {Boušek}",
  title="SiNx and SiO2 as passivation layers for high grade solar cells.",
  booktitle="Socrates workshop 2005",
  year="2005",
  number="1",
  pages="6",
  publisher="nakl. Z. Novotný",
  address="Brno",
  isbn="80-214-3042-7"
}