Detail publikace

Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells

VENTOSINOS, F. KLUSÁČEK, J. FINSTERLE, T. KUNZEL, K. HAUG, F. HOLOVSKÝ, J.

Originální název

Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

We show that two-terminal multijunction cells interconnected by tunnel junctions are fairly immune to individual local shunts, thanks to the shunt quenching. Interestingly, they may still suffer from global shunts. We revise the paradigm of a multijunction cell as a simple serial connection of component cells. This paradigm remains valid only for multijunction cells with laterally conductive interlayers. Instead, a new equivalent circuit is proposed and verified by measurement and simulations. As a main approach, selective illumination is applied and the voltage is measured at the end terminals. The global shunt is seen as a shift from logarithmic to linear intensity response. The presence of tunnel junction is important for an optimum configuration of tandem structures such as metal-halide perovskite with crystalline silicon solar cell.

Klíčová slova

Equivalent circuit; multijunction solar cells; shunting; solar cells; tandem solar cells; tunnel junction

Autoři

VENTOSINOS, F.; KLUSÁČEK, J.; FINSTERLE, T.; KUNZEL, K.; HAUG, F.; HOLOVSKÝ, J.

Vydáno

4. 6. 2018

Nakladatel

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Místo

PISCATAWAY

ISSN

2156-3381

Periodikum

IEEE Journal of Photovoltaics

Ročník

8

Číslo

4

Stát

Spojené státy americké

Strany od

1005

Strany do

1010

Strany počet

6

URL

https://ieeexplore.ieee.org/document/8371529

BibTex

@article{BUT164879,
  author="Federico {Ventosinos} and Jan {Klusáček} and Tomáš {Finsterle} and Karel {Kunzel} and Franz-Jozef {Haug} and Jakub {Holovský}",
  title="Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells",
  journal="IEEE Journal of Photovoltaics",
  year="2018",
  volume="8",
  number="4",
  pages="1005--1010",
  doi="10.1109/JPHOTOV.2018.2828850",
  issn="2156-3381",
  url="https://ieeexplore.ieee.org/document/8371529"
}