Detail publikace

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

HERCEG, E.

Originální název

Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

This article deals with the extrinsic and intrinsic parameters of the Galium-Nitride RF transistor. These parameters are essential in any design of large-signal analysis of RF amplifiers. Package parasitics are the biggest problem of integrated circuits (ICs), especially at high frequencies. Each IC package gives unwanted parasitics to the primary function of the IC. The analysis of these package parasitics can be performed by the transistor manufacturer, which provides a non-linear model of the transistor, where parasitics elements are separated from the transistor. With these sep-arated package parasitics, the highest efficiency, power output, and accurate harmonic termination can be achieved. The main purpose of this article is to describe these problems.

Klíčová slova

GaN Transistor, Waveforms, Extrinsic, Intrinsic, Load-Pull, Source-Pull, Radio-Fre-quency, Transistor Parasitics

Autoři

HERCEG, E.

Vydáno

23. 4. 2020

Nakladatel

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Místo

Brno

ISBN

978-80-214-5867-3

Kniha

Proceedings of the 26th Conference STUDENT EEICT 2020

Strany od

314

Strany do

318

Strany počet

5

BibTex

@inproceedings{BUT164907,
  author="Erik {Herceg}",
  title="Intrinsic And Extrinsic Parameters Of Galium - Nitride Transistors",
  booktitle="Proceedings of the 26th Conference STUDENT EEICT 2020",
  year="2020",
  pages="314--318",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5867-3"
}