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SEDLÁKOVÁ, V. ŠIKULA, J. GRMELA, L. HÖSCHEL, P. SITA, Z. HASHIGUCHI, S. TACANO, M.
Originální název
Noise and Carge Storage in Nb2O5 Thin Films
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.
Klíčová slova v angličtině
Noise, Poole-Frenkel transport, Tunnelling, Niobium Pentoxide, MIS structure
Autoři
SEDLÁKOVÁ, V.; ŠIKULA, J.; GRMELA, L.; HÖSCHEL, P.; SITA, Z.; HASHIGUCHI, S.; TACANO, M.
Rok RIV
2005
Vydáno
1. 1. 2005
Nakladatel
American Institute of Physics
Místo
United States of America
ISBN
0-7354-0267-1
Kniha
Noise and Fluctuations
Strany od
135
Strany do
138
Strany počet
4
BibTex
@inproceedings{BUT16506, author="Vlasta {Sedláková} and Josef {Šikula} and Lubomír {Grmela} and Pavel {Höschel} and Zdeněk {Sita} and Sumihisa {Hashiguchi} and Munecazu {Tacano}", title="Noise and Carge Storage in Nb2O5 Thin Films", booktitle="Noise and Fluctuations", year="2005", pages="4", publisher="American Institute of Physics", address="United States of America", isbn="0-7354-0267-1" }