Detail publikace

Noise and Carge Storage in Nb2O5 Thin Films

SEDLÁKOVÁ, V. ŠIKULA, J. GRMELA, L. HÖSCHEL, P. SITA, Z. HASHIGUCHI, S. TACANO, M.

Originální název

Noise and Carge Storage in Nb2O5 Thin Films

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A low frequency noise and DC leakage current measurements have been performed on the MIS structure NbO - Nb2O5 - MnO2. The mechanism of current flow and current noise sources were determined from these measurements. The insulating layer thickness is 50 to 150 nm, relative permittivity about 38. The charge is accumulated not only on NbO and MnO2 electrodes, but also in the Nb2O5 insulating layer. The charge carrier transport is determined by the Poole-Frenkel mechanism and tunnelling in the normal mode (for NbO electrode positive). In this case g-r noise is dominant for Poole-Frenkel mechanism and 1/f noise is dominant for tunnelling.

Klíčová slova v angličtině

Noise, Poole-Frenkel transport, Tunnelling, Niobium Pentoxide, MIS structure

Autoři

SEDLÁKOVÁ, V.; ŠIKULA, J.; GRMELA, L.; HÖSCHEL, P.; SITA, Z.; HASHIGUCHI, S.; TACANO, M.

Rok RIV

2005

Vydáno

1. 1. 2005

Nakladatel

American Institute of Physics

Místo

United States of America

ISBN

0-7354-0267-1

Kniha

Noise and Fluctuations

Strany od

135

Strany do

138

Strany počet

4

BibTex

@inproceedings{BUT16506,
  author="Vlasta {Sedláková} and Josef {Šikula} and Lubomír {Grmela} and Pavel {Höschel} and Zdeněk {Sita} and Sumihisa {Hashiguchi} and Munecazu {Tacano}",
  title="Noise and Carge Storage in Nb2O5 Thin Films",
  booktitle="Noise and Fluctuations",
  year="2005",
  pages="4",
  publisher="American Institute of Physics",
  address="United States of America",
  isbn="0-7354-0267-1"
}