Přístupnostní navigace
E-přihláška
Vyhledávání Vyhledat Zavřít
Detail publikace
GABLECH, I. KLEMPA, J. PEKÁREK, J. VYROUBAL, P. KUNZ, J. NEUŽIL, P.
Originální název
Aluminum nitride based piezoelectric harvesters
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.
Klíčová slova
MEMS, Harvesters, AlN
Autoři
GABLECH, I.; KLEMPA, J.; PEKÁREK, J.; VYROUBAL, P.; KUNZ, J.; NEUŽIL, P.
Vydáno
2. 12. 2019
Nakladatel
IEEE
Místo
NEW YORK
ISBN
978-1-7281-5638-5
Kniha
19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings
Strany od
1
Strany do
4
Strany počet
BibTex
@inproceedings{BUT166135, author="Imrich {Gablech} and Jaroslav {Klempa} and Jan {Pekárek} and Petr {Vyroubal} and Jan {Kunz} and Pavel {Neužil}", title="Aluminum nitride based piezoelectric harvesters", booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS) Conference Proceedings", year="2019", pages="1--4", publisher="IEEE", address="NEW YORK", isbn="978-1-7281-5638-5" }