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TOMÁNEK, P., OTEVŘELOVÁ, D., GRMELA, L., BRÜSTLOVÁ, J., DOBIS, P.
Originální název
Local near-field scanning optical microscopy and spectroscopy of nanostructures
Typ
článek ve sborníku ve WoS nebo Scopus
Jazyk
angličtina
Originální abstrakt
Visible and near infrared Scanning Near Field Optical Microscopy (SNOM) was used to characterize nanostructured semiconductor materials and structures. SNOM is a relatively new technique that combines the versatility of optical microscopy with the resolution of a scanning probe microscope. Light coupled into a tapered optical fiber is used for excitation. The fiber probe is scanned over the sample while being held ~10 nm above the surface. At this point, any number of high resolution (~100 nm) optical measurements can be made. In this work, the SNOM-induced photocurrent in GaAs devices was measured.
Klíčová slova
nanostructures, near-field spectroscopy, local optical properties, local photolumine-scence, locally induced photocurrent
Autoři
Rok RIV
2005
Vydáno
10. 2. 2005
Nakladatel
Brno University of Technology
Místo
Brno
ISBN
80-214-2793-0
Kniha
Nano´04
Strany od
188
Strany do
193
Strany počet
6
BibTex
@inproceedings{BUT17006, author="Pavel {Tománek} and Dana {Otevřelová} and Lubomír {Grmela} and Jitka {Brüstlová} and Pavel {Dobis}", title="Local near-field scanning optical microscopy and spectroscopy of nanostructures", booktitle="Nano´04", year="2005", pages="188--193", publisher="Brno University of Technology", address="Brno", isbn="80-214-2793-0" }