Detail publikace

Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

TUČEK, M. BÚRAN, M. VÁŇA, R. HLADÍK, L. VINCENC OBOŇA, J.

Originální název

Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks

Typ

článek ve sborníku mimo WoS a Scopus

Jazyk

angličtina

Originální abstrakt

As the semiconductor industry demands higher throughput for failure analysis, there is a constant need to rapidly speed up the sample preparation workflows. Here we present extended capabilities of the standard Xe plasma Focused Ion Beam failure analysis workflows by implementing a standalone laser ablation tool. Time-to-sample advantages of such workflow is shown on four distinct applications: cross-sectioning of a large solder ball, cross-sectioning of a deeply buried wire bond, cross-sectioning of the device layer of an OLED display, and removing the MEMS silicon cap to access underlying structures. In all of these workflows we have shown significant decrease in required process time while altogether avoiding the disadvantages of corresponding mechanical and chemical methods.

Klíčová slova

failure analysis, laser ablation, microelectromechanical systems, OLED display, plasma focused ion beam, sample preparation, silicon cap

Autoři

TUČEK, M.; BÚRAN, M.; VÁŇA, R.; HLADÍK, L.; VINCENC OBOŇA, J.

Vydáno

1. 12. 2020

Nakladatel

ASM International

Místo

Pasadena

ISBN

9781627083331

Kniha

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Strany od

17

Strany do

19

Strany počet

3

URL

https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398

BibTex

@inproceedings{BUT170547,
  author="Marek {Tuček} and Martin {Búran} and Rostislav {Váňa} and Lukáš {Hladík} and Jozef {Vincenc Oboňa}",
  title="Laser Ablation for Throughput Increase in Large Volume Semiconductor Failure Analysis Tasks",
  booktitle="Conference Proceedings from the International Symposium for Testing and Failure Analysis",
  year="2020",
  pages="17--19",
  publisher="ASM International",
  address="Pasadena",
  doi="10.31399/asm.cp.istfa2020p0017",
  isbn="9781627083331",
  url="https://dl.asminternational.org/istfa/proceedings-abstract/ISTFA2020/83348/17/15398"
}