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PETRŽELA, J.
Originální název
Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
This paper is focused on the investigation of self-oscillation regimes associated with very simple structure of lambda diode. This building block is constructed by using coupled generalized bipolar transistors. In the stage of mathematical modeling, each transistor is considered as two-port de-scribed by full admittance matrix with scalar polynomial forward trans-conductance and linear backward trans-conductance. Thorough numerical analysis including routines of dynamical flow quantification indicate the existence of self-excited dense strange attractors. Plots showing first two Lyapunov exponents as functions of adjustable parameters, signal entropy calculated from gen-erated time sequence, sensitivity analysis, and other results are provided in this paper. By the construction of a flow-equivalent chaotic oscillator, robustness and long-time geometrical sta-bility of the generated chaotic attractors is documented by the experimental measurement, namely by showing captured oscilloscope screenshots.
Klíčová slova
admittance parameters; chaotic oscillator; lambda diode; Lyapunov exponents; strange attractors; vector field
Autoři
Vydáno
7. 4. 2021
Nakladatel
MDPI
Místo
Basel (Switzerland)
ISSN
2076-3417
Periodikum
Applied Sciences - Basel
Ročník
11
Číslo
8
Stát
Švýcarská konfederace
Strany od
3326
Strany do
3347
Strany počet
22
URL
https://www.mdpi.com/2076-3417/11/8/3326
Plný text v Digitální knihovně
http://hdl.handle.net/11012/196758
BibTex
@article{BUT171114, author="Jiří {Petržela}", title="Chaotic and hyperchaotic self-oscillations of lambda diode composed by generalized bipolar transistors", journal="Applied Sciences - Basel", year="2021", volume="11", number="8", pages="3326--3347", doi="10.3390/app11083326", issn="2076-3417", url="https://www.mdpi.com/2076-3417/11/8/3326" }