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PETRŽELA, J.
Originální název
Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors
Typ
článek v časopise ve Web of Science, Jimp
Jazyk
angličtina
Originální abstrakt
This paper yields process of development, numerical analysis, lumped circuit modeling, and experimental verification of a new hyperchaotic oscillator based on the fundamental topology of two-stage amplifier. Analyzed network structure contains two generalized bipolar transistors connected with common emitter. Both transistors are initially modeled as two-ports via full admittance matrix, considering linear backward trans-conductance and polynomial forward trans-conductance. As proved in paper, these two scalar nonlinearities can push amplifier to exhibit robust hyperchaotic behavior with significantly high Kaplan-Yorke dimension. Regions of chaos and hyperchaos in a space of admittance parameters associated with both transistors are specified following the concept of positive values of Lyapunov exponents. Long time structural stability of generated hyperchaotic waveforms is proved by construction of flow-equivalent electronic circuit and experimental measurement, that is by screenshots captured by oscilloscope.
Klíčová slova
Admittance parameters; bipolar transistor; class C amplifier; chaos; chaotic oscillator; hyperchaos; Lyapunov exponents; strange attractors
Autoři
Vydáno
22. 4. 2021
Nakladatel
IEEE
Místo
USA
ISSN
2169-3536
Periodikum
IEEE Access
Ročník
9
Číslo
4
Stát
Spojené státy americké
Strany od
62182
Strany do
62194
Strany počet
13
URL
https://ieeexplore.ieee.org/document/9409077
Plný text v Digitální knihovně
http://hdl.handle.net/11012/196742
BibTex
@article{BUT171295, author="Jiří {Petržela}", title="Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors", journal="IEEE Access", year="2021", volume="9", number="4", pages="62182--62194", doi="10.1109/ACCESS.2021.3074367", issn="2169-3536", url="https://ieeexplore.ieee.org/document/9409077" }